Preparation method for low-temperature film transistor

A thin-film transistor, low-temperature technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low storage capacity and toxicity, and achieve improved uniformity, improved interface quality, and reduced sub-threshold swing. Effect

Inactive Publication Date: 2018-03-06
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most oxide transistors require high-temperature annealing to exhibit excellent performance, which is contrary to future flexible display devices
At the same time, IGZO is mostly grown by magnetron sputtering, and the problem of large-area uniformity has not been solved. In practical applications, electron mobility has to be sacrificed and amorphous IGZO TFTs are used.
Moreover, the storage capacity of indium is very small and gallium is toxic, so it is still a difficult problem to find a channel layer material that can replace IGZO without annealing and a large-area uniform film formation method.

Method used

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  • Preparation method for low-temperature film transistor
  • Preparation method for low-temperature film transistor
  • Preparation method for low-temperature film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Preparation:

[0033] like figure 1 and 2 As shown, the heavily doped P-type Si substrate was placed in an ALD reaction chamber, and Al was deposited at 80 °C. 2 O 3 Gate insulating layer 36nm; using in-situ growth method, at 80 ℃, directly on Al 2 O 3 Deposit ZnO on 15nm. The obtained device is processed in the ultra-clean room, and the first photolithography is performed first. The processing conditions are: use positive glue, use a glue homogenizer, first use 600r / s, turn for 9s, and then use 4000r / s, turn for 1min. After baking at 115°C for 1 min, use an exposure machine to expose for 14 s. Afterwards, a positive film developer was used for 20s development. Next, the channel is etched, and after being etched in phosphoric acid for 25s, the residual phosphoric acid is washed in deionized water. Then use acetone to remove the glue. Then carry out secondary photolithography, negative glue, use a glue dispenser, first use 600r / s, turn for 9s, then use 4000r / s, tu...

Embodiment 2

[0037] Preparation:

[0038] Put the ITO / PET substrate into the ALD reaction chamber and deposit Al at 80°C 2 O 3 Gate insulating layer 36nm; using in-situ growth method, at 100 ℃, directly on Al 2 O 3 Deposit ZnO 20nm on it. The obtained device is processed in the ultra-clean room, and the first photolithography is performed first. The processing conditions are: use positive glue, use a glue homogenizer, first use 600r / s, turn for 9s, and then use 4000r / s, turn for 1min. After baking at 115°C for 1 min, use an exposure machine to expose for 14 s. Afterwards, a positive film developer was used for 20s development. Next, the channel is etched, and after being etched in phosphoric acid for 25s, the residual phosphoric acid is washed in deionized water. Then use acetone to remove the glue. Then carry out secondary photolithography, negative glue, use a glue dispenser, first use 600r / s, turn for 9s, then use 4000r / s, turn for 1min. After pre-baking at 90 °C for 1 min, use ...

Embodiment 3

[0042] Preparation:

[0043] Put the heavily doped P-type Si substrate into the ALD reaction chamber and deposit Al at 100 °C 2 O 3 Gate insulating layer 36nm; using in-situ growth method, at 100 ℃, directly on Al 2 O 3 Deposit ZnO on 15nm. The obtained device is processed in the ultra-clean room, and the first photolithography is performed first. The processing conditions are: use positive glue, use a glue homogenizer, first use 600r / s, turn for 9s, and then use 4000r / s, turn for 1min. After baking at 115°C for 1 min, use an exposure machine to expose for 14 s. Afterwards, a positive film developer was used for 20s development. Next, the channel is etched, and after being etched in phosphoric acid for 25s, the residual phosphoric acid is washed in deionized water. Then use acetone to remove the glue. Then carry out secondary photolithography, negative glue, use a glue dispenser, first use 600r / s, turn for 9s, then use 4000r / s, turn for 1min. After pre-baking at 90 °C ...

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Abstract

The invention provides a preparation method for a low-temperature film transistor. A large-area uniform film transistor with the excellent performances can be prepared without annealing, and the method comprises the following steps: 1, placing a substrate provided with a conductive film in a deposited manner into an ALD reaction cavity, and then carrying out the vacuum pumping and heating processing; 2, growing a high-k material under the temperature from the room temperature to 120 DEG C as a grid insulating layer, wherein k is 7-170, and the thickness of the grid insulating layer is 15-150nm; 3, carrying out the direct in-situ growing of a ZnO trench layer under the temperature from the room temperature to 120 DEG C, wherein the thickness of the ZnO trench layer is 10-50nm; 4, carrying out the ultraviolet exposure of the device obtained at step 3, carrying out the secondary photoetching after the trench etching, carrying out the evaporation of the source and drain electrodes, and preparing a bottom-grid low-temperature film transistor without annealing.

Description

technical field [0001] The invention relates to a preparation method of a low-temperature thin film transistor. technical background [0002] In recent years, transparent display technology has developed rapidly, from Liquid Crystal Display (LCD) to Organic Light Emitting Diode (OLED), Quantum Dot Light Emitting Diodes (QLED) and now in its infancy Micro LEDs. No matter what kind of display technology, it is inseparable from a thin film transistor (Thin Film Transistor, TFT) as a driver. In addition, both OLED and Micro LED are current-driven devices, which requires the TFT to provide a relatively large driving current; moreover, the driving current directly determines the brightness of the display screen, thus requiring the TFT backplane to have excellent uniformity and stability sex. [0003] However, traditional amorphous silicon (a-Si) TFT devices have low mobility, the channel needs to be made of a light-shielding layer, and the stability is poor, which cannot meet t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/34H01L21/443H01L21/02H01L29/22
CPCH01L21/02414H01L21/02554H01L21/02631H01L21/443H01L29/22H01L29/66969
Inventor 吴昊陈雪张国祯刘昌
Owner WUHAN UNIV
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