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Light emitting element

A technology of light-emitting elements and light-emitting layers, which is applied to electrical components, semiconductor devices, circuits, etc., can solve problems such as loss and external quantum efficiency reduction, and achieve the effects of improving production capacity, improving extraction efficiency, and reducing costs

Inactive Publication Date: 2018-03-27
SCIVAX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, when the light is incident on the surface of the electrode or the surface of the substrate at an angle greater than the predetermined critical angle, it is reflected by the interface between the electrode and the p-type semiconductor layer or the surface of the substrate, and propagates laterally in the stacked structure of the semiconductor layer to be absorbed. Trapped in the waveguide, there is also a loss due to absorption in the transverse propagation, which becomes the cause of the decrease in external quantum efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0098] First, the relationship between the shape of the concavo-convex structure and the light extraction efficiency was simulated. Here, a general model (model) is used for the build-up part composed of the semiconductor layer or the substrate of the LED. In addition, the diffractive surface is arranged at the boundary between the substrate (refractive index 1.78) and the semiconductor layer (refractive index 2.5), and the shape of the concavo-convex structure is as follows.

[0099] L&S: Made Figure 8 In the shown line and space form, the width of the line is made 40% of the period.

[0100] Checkerboard (staggered): made Figure 7 (a) shows a triangular checkerboard shape.

[0101] grid: will Figure 5 The recesses shown in (b) are made into a square lattice shape, and the width of the line is 30% of the period.

[0102] In addition, the period and height of the concavo-convex structure were made to be the same size, and 8 types with periods varying by 0.1 μm from 0.3...

Embodiment 2

[0110] Next, when the concave-convex structure is in the shape of lines and spaces, a checkerboard (triangle), or a grid (square), the protrusions of the concave-convex structure are made of SiO 2 (Refractive index: 1.45) grid (square), the period is fixed at 0.5 μm, and the simulated height is 0.3 μm to 1.0 μm, respectively 8 kinds of different 0.1 μm. Other conditions are identical with embodiment 1. The results are shown in Table 3 and Figure 12 .

[0111] table 3

[0112]

[0113] Flat surface: light extraction efficiency 6.7

[0114] μPSS: Light extraction efficiency 16.2

[0115] From Table 3 and Figure 12 It can be seen that the convex part of the concave-convex structure is made of SiO 2 The formed lattice (square) can obtain the highest light extraction efficiency even when the height of the concavo-convex structure is any height. In addition, when the height of the concavo-convex structure is less than 0.6 μm, when the concavo-convex structure is in the s...

Embodiment 3

[0117] Next, the relationship between the inclination of the sidewall of the convex portion of the concave-convex structure with respect to the diffractive surface and the light extraction efficiency was simulated. The planar shape of the concavo-convex structure was a square lattice with a period of 0.5 μm, a height of 0.25 μm, and a width of 0.15 μm at a half of the height (0.125 μm in height). And, if Figure 13 As shown, simulations were performed for six types of concavo-convex structures in which the inclination of the sidewall of the convex part with respect to the diffractive surface was different by 5 degrees in the range of 65 degrees to 90 degrees. Other conditions are identical with embodiment 1. The results are shown in Table 4 and Figure 14 .

[0118] Table 4

[0119]

[0120] From Table 4 and Figure 14 It can be seen that the larger the angle of the concavo-convex structure, the higher the light extraction efficiency can be obtained.

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Abstract

Provided is an optical element with a light extraction efficiency increased through the use of an irregular structure mainly providing an optical diffraction effect than scattering effect. A light emitting element is provided with: a laminate portion 8 in which at least a semiconductor layer including a light emitting layer 84 is laminated; and a diffraction surface 2 which is formed in a boundaryof any of layers included in the laminate portion 8 and which includes an irregular structure formed so as to reflect incident light emitted from the light emitting layer 84 according to a Bragg's condition of diffraction. The light emitting element is characterized in that the irregular structure is formed such that the inclination of a side wall of a protruding portion with respect to the diffraction surface 2 is more than 75 degrees.

Description

technical field [0001] The present invention relates to a light-emitting element with improved light extraction efficiency. Background technique [0002] A light emitting diode (LED) basically has a structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked on a substrate. Furthermore, electrodes are formed on the p-type semiconductor layer and the n-type semiconductor layer, and light is generated in the light-emitting layer by recombination of holes implanted from the semiconductor layer and electrons. A structure is adopted in which the light is taken out from the light-transmitting electrode or the substrate on the p-type semiconductor layer. Furthermore, the light-transmitting electrode is a light-transmitting electrode formed of a metal thin film or a transparent conductive film formed on substantially the entire surface of the p-type semiconductor layer. [0003] In light-emitting diodes with such a structu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/10
CPCH01L33/10H01L33/20H01L33/22H01L33/007H01L33/06H01L33/12H01L33/145H01L33/32H01L33/40H01L2933/0016
Inventor 须崎泰正绳田晃史田中觉
Owner SCIVAX CORP