A High-Voltage Interconnection Structure for Lateral Power Devices
A technology of lateral power devices and interconnect structures, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as increasing process complexity
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Embodiment 1
[0040] Such as Figure 4a Shown is a schematic diagram of a three-dimensional structure of a lateral power device with a high-K insulating region provided by the present invention, Figure 4b is along Figure 4a The cross-sectional view of the device along the AB line. It can be seen that a trench of a certain shape is etched on the epitaxial layer 2 , and then an insulating material with a high dielectric constant is filled in the trench, thereby forming a semiconductor region 3 and a high-K insulator region 4 . Next, a semiconductor drain region 5, a semiconductor body region 6, a semiconductor body contact region 7, a semiconductor source region 8, a gate oxide layer 9, a gate metal 10, a source metal 11, Drain metal 12, insulating dielectric layer 13, high-voltage interconnection metal wire 15.
Embodiment 2
[0042] Under the condition that the basic structure remains unchanged, a flexible design is carried out, Figure 5a It is a high-voltage interconnection LDMOS with a high-K insulator region and a low-K insulating dielectric region provided by the present invention, Figure 5b is along Figure 5a The cross-sectional view of the device along the AB line. It can be seen from the figure that the insulating dielectric layer 13 in the area directly above the high-K insulator region 4 is a low-K insulating dielectric layer 14 made of a low-K material, while the insulating dielectric layer above the semiconductor region 3 in the drift region still uses is conventional silica.
Embodiment 3
[0044] Under the condition that the basic structure remains unchanged, a flexible design is carried out, Figure 6a It is a high-voltage interconnection LDMOS with a high-K insulating region and an extended low-K insulating dielectric region provided by the present invention, Figure 6b is along Figure 6a The cross-sectional view of the device along the AB line. It can be seen from the figure that the drift region of this structure is composed of a semiconductor region 3, a high-K insulating region 4, and a low-K insulating dielectric layer 14 above it. The thickness of the low-K insulating dielectric layer 14 is thicker than that of the insulating dielectric layer 13, and extends High-K insulator region 4. The insulating dielectric layer above the semiconductor region 3 is still conventional silicon dioxide.
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