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Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity

A technology of silicon-on-insulator and sensing devices, applied in fluid pressure measurement using changing ohmic resistance, microstructure devices composed of deformable elements, measuring fluid pressure, etc., can solve problems such as pressure sensitivity problems

Active Publication Date: 2018-04-10
VITESCO TECH USA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Pressure sensitivity of MEMS pressure sensing devices becomes more problematic as membrane size decreases

Method used

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  • Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity
  • Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity
  • Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] figure 1 is a perspective view of a prior art pressure sensor 100 . The pressure sensor 100 includes a plastic housing generally indicated by the reference numeral 102 .

[0021] The housing 102 has a rectangular shaped body 104, such as figure 2 The MEMS pressure sensing device 204 shown in is positioned in the rectangular shaped body 104 . Fluid (liquid or gas) pressure is applied to MEMS pressure sensing device 204 through port 106 , which extends from the outside of the housing as shown to a cavity (not shown) within housing 102 .

[0022] MEMS pressure sensing device 204 in housing 102 converts changes in fluid pressure into a voltage, which is obtained through electrical connection 108 located in a generally tubular port or port extending outwardly from housing 102 . Channel 110. In other words, pressure applied to MEMS pressure sensing device 204 within housing 102 through port 106 produces a measurable output voltage at connection terminal 108 positioned wi...

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Abstract

The invention relates to a cavity with silicon on insulator MEMS pressure sensing device with an extended shallow polygon cavity. An improved microelectromechanical system (MEMS) pressure sensing device has an extended shallow polygon cavity on a top side of a silicon supporting substrate. A buried silicon dioxide layer is formed between the top side of the supporting substrate and a bottom side of a device layer. Piezoresistors and bond pads are formed and located on a top side of the device layer and produce measureable voltage changes responsive to a fluid pressure applied to the device layer. The purpose of the extend shallow polygon cavity is to improve the sensitivity or increase the span while keep a low pressure nonlinearity during shrinking the die size of the MEMS pressure sensing device die with corner metal bond pads having a keep-out distance to prevent a wire bonder from breaking the thin diaphragm.

Description

Background technique [0001] Microelectromechanical systems (MEMS) pressure sensing devices are well known. For example, US Patent No. 4,236,137 to Kurtz et al. discloses semiconductor pressure transducers. US Patent No. 5,178,016 and US Patent No. 6,093,579 also disclose solid state pressure sensors. US Patent 8,881,596, entitled "Semiconductor Sensing Device to Minimize Thermal Noise," owned by the applicant of the present application, discloses a MEMS pressure sensing device and is incorporated herein by reference in its entirety. [0002] MEMS pressure sensing devices are known to "suffer" from pressure non-linearity, or "PNL". PNL is a function of silicon membrane deflection. However, the ability of the membrane to flex also determines the ability of the MEMS pressure sensing device to detect changes in pressure. As the membrane deflection increases, the output nonlinearity also increases. See, for example, US pre-grant publication 2015 / 0330856 entitled "Pressure Sens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18B81B7/00H10N30/30
CPCB81B7/0009G01L1/18B81B2201/0264G01L9/005G01L9/06B81B3/0064B81B3/0059B81B2203/0127B81B2203/0315B81C1/00158B81C2201/013B81C2203/036H01C10/10H01C10/20
Inventor J-H.A.邱S-H.S.陈
Owner VITESCO TECH USA
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