An ion implantation device and its control method
An ion implantation device and an ion implantation technology are applied in the field of ion implantation device and its control, and can solve the problems of decreasing number and high number of impurity particles P on a substrate to be implanted for the first time
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[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0033] An embodiment of the present invention provides an ion implantation device, such as figure 2 As shown, it includes an ion source 10 , a beamline device 20 , an ion implantation chamber 30 , and a monitoring device 301 located in the ion implantation chamber 30 . The monitoring device 301 is used to monitor the current of the ion beam B2 entering the ion implantation chamber 30 through the beam line device 20 during the stage of adjusting the magnetic fie...
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