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RGBW four-color LED chip based on GaN material and preparation method

A technology of LED chips and blue light materials, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult packaging, reduced light, and poor reliability.

Pending Publication Date: 2018-04-20
XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, a single light-emitting chip can only emit monochromatic light. If light of other colors needs to be synthesized, light-emitting chips of different colors need to be mixed together and filled with a large amount of phosphor powder. difficult problem
In addition, when light is incident into the phosphor layer, there will be strong scattering, which will cause the phosphor layer to absorb light, causing a large amount of light to be reflected, that is, the light transmitted through the phosphor layer will be significantly reduced.

Method used

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  • RGBW four-color LED chip based on GaN material and preparation method
  • RGBW four-color LED chip based on GaN material and preparation method
  • RGBW four-color LED chip based on GaN material and preparation method

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Embodiment Construction

[0075] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0076] See figure 1 , figure 1 A flow chart of a method for preparing a GaN material-based RGBW four-color LED chip provided by the present invention, the method includes:

[0077] Select sapphire as substrate (11);

[0078] growing a blue light material on the substrate (11), wherein the blue light material includes GaN;

[0079] performing selective etching on the blue light material to form a red light wick groove;

[0080] growing a red light material in the red light wick groove;

[0081] performing selective etching on the blue light material to form a green light wick groove;

[0082] growing a green light material in the green light wick groove;

[0083] etching the blue light material, the red light material and the gree...

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Abstract

The invention provides a preparation method of an RGBW four-color LED chip based on a GaN material. The preparation method includes selecting sapphire as a substrate (11); growing a blue light material on the substrate (11), wherein the blue light material includes GaN; performing selective etching on the blue light material to form a red light lampwick groove; growing a red light material in thered light lampwick groove; performing selective etching on the blue light material to form a green light lampwick groove; growing a green light material in the green light lampwick groove; etching theblue light material, red light material and green light material to form a white light material; and preparing electrodes on the blue light material, red light material, green light material and white light material separately. The preparation method of an RGBW four-color LED chip based on a GaN material has the beneficial effects: 1, light of multiple colors can be generated in a single chip, and the using amount of fluorescent powder is less; 2, the integration level is improved, and LED cost can be reduced; and 3, color temperature adjustment is more flexible.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN material-based RGBW four-color LED chip and a preparation method thereof. Background technique [0002] LED light sources are more and more commonly used in the field of lighting. Usually, the LED light source emits various colors of light through the LED light-emitting chip and phosphor powder. In the prior art, a single light-emitting chip can only emit monochromatic light. To synthesize light of other colors, it is necessary to mix light-emitting chips of different colors together and fill a large amount of phosphor powder. Difficult question. In addition, strong scattering occurs when light is incident on the phosphor layer, which makes the phosphor layer absorb light, causing a large amount of light to be reflected, that is, the light transmitted through the phosphor layer will be significantly reduced. Therefore, how to design a new type of LED chip becomes ...

Claims

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Application Information

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IPC IPC(8): H01L33/08H01L33/00
CPCH01L33/007H01L33/08
Inventor 左瑜
Owner XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD