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LDMOS level shifting dv/dt noise suppression circuit for IGBT grid driver chip

A gate drive and level shifting technology, applied in electrical components, electronic switches, pulse technology, etc., can solve problems such as output waveform errors, and achieve the effects of avoiding false triggers and reducing transmission delays

Active Publication Date: 2018-04-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the noise width is wide and cannot be completely filtered out by the pulse filter, the noise signal will trigger the RS flip-flop, resulting in a false trigger signal, resulting in a wrong output waveform

Method used

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  • LDMOS level shifting dv/dt noise suppression circuit for IGBT grid driver chip
  • LDMOS level shifting dv/dt noise suppression circuit for IGBT grid driver chip
  • LDMOS level shifting dv/dt noise suppression circuit for IGBT grid driver chip

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Embodiment Construction

[0043]The above and / or additional aspects and advantages of the present invention will become apparent and comprehensible from the following description of the embodiments in conjunction with the accompanying drawings.

[0044] according to figure 2 The simulation waveform shows that, from the perspective of the time axis, the change of the high-side floating ground VS falls within the range of the change range of the gate voltage VGE of the IGBT to be driven. Therefore, the variation of VB caused by the variation of the high-side floating ground VS is also within the variation range of the IGBT gate voltage VGE.

[0045] Based on the above characteristics, the present invention provides an improved LDMOS level shift dv / dt noise suppression circuit for IGBT gate drive chips. Such as image 3 As shown, the noise suppression circuit is integrated in the IGBT gate drive chip together with the low-voltage side narrow pulse generation module 1, the LDMOS level shift module 2 and...

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Abstract

The invention provides an LDMOS level shifting dv / dt noise suppression circuit for an IGBT grid driver chip. The IGBT grid driver chip comprises a low-voltage side narrow-pulse production module, an LDMOS level shifting module and an output driving module, and the output end of the output driving module is connected with the grid of a to-be-driven IGBT through a grid resistor; the noise suppression circuit is characterized by comprising a voltage detection circuit, a pull-down circuit and a RS trigger, wherein the input end of the voltage detection circuit is connected with the grid of the IGBT; the input end of the pull-down circuit is connected with the output end of the voltage detection circuit; the R end of the RS trigger is connected with the first output end of the pull-down circuit, the S end is connected with the second output end of the pull-down circuit, and the Q end is connected with the input end of the output driving module. By using the specific relation between the dv / dt noise and the IGBT grid voltage, the dv / dt noise is filtered by detecting the change interval of the IGBT grid voltage.

Description

technical field [0001] The invention relates to the field of high-voltage power integrated circuits, in particular to an LDMOS level shift dv / dt noise suppression circuit for an IGBT gate drive chip. Background technique [0002] Under the background of energy saving and emission reduction, green environmental protection and intelligent control becoming more and more popular, power electronic technology has played an irreplaceable role in the development of various fields. High-voltage power integrated circuits are used more and more widely, mainly in the fields of automotive electronics, motor drives, display ICs, audio integrated circuits, and switching power supplies. Power devices are extremely important in power integrated circuits. With the development of semiconductor technology, IGBT has become the main power output device. IGBT combines the advantages of BJT and MOSFET, and has the characteristics of fast switching speed, high withstand voltage, large current, and ...

Claims

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Application Information

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IPC IPC(8): H03K17/16H03K17/567H03K17/687
CPCH03K17/161H03K17/168H03K17/567H03K17/687
Inventor 徐大伟朱弘月董业民李新昌徐超
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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