A Method for Improving In-plane Uniformity of Integrated Etching Process Based on Radio Frequency Hours
A technology of process surface and uniformity, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting product electrical performance and yield, etched pattern structure and line width drift, etc., to improve in-plane uniformity sexual effect
Active Publication Date: 2020-08-04
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
Any drift in the etching process will lead to a drift in the final etched pattern structure and line width, which will directly affect the electrical performance and yield of the product
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[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0040] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
[0041] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0042] In a preferred embodiment, a method for improving the in-plane uniformity of the integrated etching proce...
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The invention provides a method for improving in-plane uniformity of an integrated etching process according to radio frequency hours. The method is applied to the field of microelectronic manufacturing. The method is characterized in that a supply pipeline of an etching blocking gas is additionally arranged at a machine end, the supply pipeline is provided with a mass flow controller, and the etching blocking gas is supplied to an etching chamber under the control of the mass flow controller. The method comprises the steps of: acquiring a relationship between the radio frequency hours and anetching rate of the etching chamber; acquiring a parameter relationship between the radio frequency hours and the etching blocking gas; acquiring the current radio frequency hours, and determining theetching rate as a target value according to the current radio frequency hours; and stabilizing the etching rate to the target value by adjusting parameters of an etching gas on the basis of the current radio frequency hours. The method has the beneficial effects that the method proposes to quantitatively adjust the parameters of the etching gas according to the number of the RF radio frequency hours fed back be the etching chamber in real time, so as to achieve the stability of key etching dimensions, and improve the in-plane uniformity of an integrally etched wafer.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the in-plane uniformity of an integrated etching process according to radio frequency hours. Background technique [0002] The etching process is one of the most critical processes in the integrated circuit manufacturing process, and its main function is to complete the final transfer and finalization of the graphics in the photolithography process on the silicon wafer. Any drift in the etching process will lead to a drift in the final etched pattern structure and line width, which will directly affect the electrical performance and yield of the product. Contents of the invention [0003] In view of the above problems, the present invention provides a method for improving the in-plane uniformity of the integrated etching process according to the radio frequency hours, which is applied in the field of microelectronics manufacturing, wherein, an e...
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IPC IPC(8): H01L21/033
CPCH01L21/033
Inventor 周磊聂钰节
Owner SHANGHAI HUALI MICROELECTRONICS CORP