Semiconductor device with metallization structure on opposite sides of a semiconductor portion

Abstract

A semiconductor device includes a semiconductor layer with a thickness of at most 50 um. The first metallization on the first surface of the semiconductor layer includes a first copper portion havinga first thickness. The second metallization structure on the opposite second surface of the semiconductor layer includes a second copper portion having a second thickness. The total thickness of the first and second thicknesses does not deviate by more than 20% from the die thickness, and the difference between the first and second thicknesses does not exceed 20% of the total thickness.

Description

technical field [0001] The present invention relates to a semiconductor device, a semiconductor switch assembly and a method of manufacturing the semiconductor device. Background technique [0002] In vertical power semiconductor devices such as power semiconductor diodes and MOSFETs (metal oxide semiconductor field effect transistors), the load current flows from the front side of the semiconductor die to the opposite back side. Typically, the metallization layer on the rear side of the power semiconductor device is soldered to the lead frame, and wire bonds connect the metallization layer on the front side with further leads of the device package. One way to reduce the on-state or forward resistance of a power semiconductor device is to reduce the distance between the front and back sides of the semiconductor die. As the thickness of semiconductor die decreases, the processing of semiconductor substrates to obtain thin semiconductor die becomes more complex in terms of ha...

AI Technical Summary

Problems solved by technology

As the thickness of semiconductor die decreases, the processing of semiconductor substrates to obtain thin semiconductor die becomes more complex in terms of handling and dicing

Additionally, the manipulation of separated thin semiconductor dies becomes more complex

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