Semiconductor device packaging structure and packaging method thereof

Abstract

The embodiment of the invention provides a semiconductor device packaging structure and a packaging method thereof, and relates to the technical field of microelectronics. The packaging complexity ofthe semiconductor device can be reduced and the thermal resistance and the conduction voltage drop of the semiconductor device can also be reduced. The semiconductor device packaging structure comprises a tube cap and a tube base. The tube cap covers the tube base. Multiple first electrode molybdenum pieces are welded on the lower surface of the tube cap. Multiple second electrode molybdenum pieces are welded on the upper surface of the tube base. Multiple second electrode molybdenum pieces and multiple first electrode molybdenum pieces are corresponding in a one-to-one way. The semiconductordevice packaging structure also comprises multiple chips and multiple locating frames. The locating frames are used for locating the chips. Multiple chips and multiple first electrode molybdenum pieces are corresponding in a one-to-one way. Each chip is arranged between each first electrode molybdenum piece and each second electrode molybdenum piece, and the chip is fit with the first electrode molybdenum piece and the second electrode molybdenum piece. The semiconductor device packaging structure and the packaging method thereof are used for semiconductor device packaging.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a packaging structure of a semiconductor device and a packaging method thereof. Background technique [0002] As an important part of electronic products, semiconductor devices have always been the research focus of researchers, and the packaging of semiconductor devices has become a research hotspot. example, such as Figure 1 to Figure 4 as shown, figure 1 It is a schematic diagram of an IGBT (InsulatedGate Bipolar Transistor, insulated gate bipolar transistor) device package structure. The package structure of the IGBT device includes a tube cover 01 and a tube base 02, as well as an IGBT subunit 03, a PCB board 05, and a gate lead-out wire 06 located between the tube cover 01 and the tube base 02. The exploded view of the IGBT subunit 03 is as follows image 3 As shown, the IGBT subunit 03 includes a first plastic frame 035, and a collector molybdenum sheet 031, a...

AI Technical Summary

Problems solved by technology

[0003] From the packaging structures of the above-mentioned IGBT devices and FRD devices, it can be seen that the packaging structures of existing semiconductor devices are relatively complicated, which leads to low production efficiency of semiconductor devices.

At the same time, since the chip is in contact with the molybdenum sheet in the existing packaging structure, and the molybdenum sheet is in contact with the tube cover or the tube base, there are multiple contact surfaces between the chip and the tube cover or the tube base, which leads to the thermal resistance of the semiconductor device. And conduction voltage drop is high, which is not conducive to the heat dissipation of semiconductor devices

Images