Monolithic integrated three-terminal voltage control light-emitting device and preparation method thereof
A light-emitting device, monolithic integration technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor compatibility and high integration process complexity, achieve low cost, simplify peripheral circuits, and prepare processes simple and reliable effect
Inactive Publication Date: 2018-08-28
SOUTH CHINA UNIV OF TECH
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Patent Document 1 [Chinese Patent Application Publication No. CN106549031A] and Patent Document 2 [Chinese Patent Application Publication No. CN 105914218A] proposed strategies for monolithically integrating LEDs and GaN high electron mobility transistors (HEMTs), but since the LED is a vertical structure device, while HEMT is a lateral structure device, the compatibility between the two is poor, and the complexity of the integration process is very high
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[0040] like figure 1 As shown, a monolithic integrated three-terminal voltage control light-emitting device of the present invention includes a substrate 101, and also includes: a light-emitting diode with a vertical structure and a vertical field-effect transistor; the light-emitting diode is provided with a positive electrode 108, vertical The field effect transistor is provided with a source electrode 109 and a gate electrode 111; the light emitting diode and the vertical field effect transistor are arranged side by side above the substrate 101 and a partition 114 is arranged between the light emitting diode and the vertical field effect transistor; the light emitting diode The vertical field effect transistor and the vertical field effect transistor have a common n-type semiconductor conductive layer 103 providing electrical connection between the two.
[0041]In this embodiment, the vertical field effect transistor includes at least an n-type semiconductor conductive laye...
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The invention discloses a monolithic integrated three-terminal voltage control light-emitting device, and belongs to the technical field of semiconductor devices. The monolithic integrated three-terminal voltage control light-emitting device comprises a substrate and further comprises a light-emitting diode and a vertical field-effect transistor which are of vertical structures; the light-emittingdiode is provided with a positive electrode, and the vertical field-effect transistor is provided with source electrodes and a grid electrode; the light-emitting diode and the vertical field-effect transistor are arranged over the substrate in parallel, and a partition part is arranged between the light-emitting diode and the vertical field-effect transistor; and the light-emitting diode and thevertical field-effect transistor are provided with a common n-type semiconductor conducting layer which is used for electrical connection between the light-emitting diode and the vertical field-effecttransistor. The monolithic integrated three-terminal voltage control light-emitting device has the advantages of being small in size, accurate to control and good in compatibility. The invention further discloses a preparation method of the monolithic integrated three-terminal voltage control light-emitting device. The preparation method has the advantage that the preparation process is simple and reliable.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, and more specifically, to a single-chip integrated three-terminal voltage-regulated light-emitting device. The invention also relates to a preparation method of a single-chip integrated three-terminal voltage-regulated light-emitting device. Background technique [0002] GaN (gallium nitride) is used to prepare blue light-emitting diodes (LEDs), which has the advantages of high brightness, high energy efficiency, long service life and fast response, and has brought revolutionary changes to lighting applications. However, LED is a current control device, and its peripheral drive control circuit structure is relatively complex and mostly constructed by discrete electronic components (mainly including AC-DC conversion circuit, current source and pulse bandwidth modulation circuit, etc.), the volume is relatively large, And it will introduce higher parameters such as parasitic resistan...
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IPC IPC(8): H01L27/15H01L21/82
CPCH01L21/82H01L27/15
Inventor 卢星李斌陈志坚黄沫
Owner SOUTH CHINA UNIV OF TECH