Semiconductor device structure

Abstract

The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a dielectric layer. The semiconductor device structure also includes a gate stackstructure in the dielectric layer. The semiconductor device structure further includes a semiconductor wire partially surrounded by the gate stack structure. In addition, the semiconductor device structure includes a contact electrode in the dielectric layer and electrically connected to the semiconductor wire. The contact electrode and the gate stack structure extend from the semiconductor wirein opposite directions.

Description

technical field [0001] Embodiments of the present disclosure relate to the structure of a semiconductor device, and more particularly to the relative positions of semiconductor lines, contact electrodes, and gate stack structures thereof. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have produced successive generations of integrated circuits. Each generation of integrated circuits has smaller and more complex circuits than the previous generation. [0003] In the evolution of integrated circuits, functional density (such as the number of interconnection devices per unit chip area) usually increases as the geometry size (the smallest component or circuit that can be formed by a process) shrinks. Process downscaling is often beneficial in increasing throughput and reducing associated costs. [0004] Dimensional scaling has also increased the process...

AI Technical Summary

Problems solved by technology

These newer classes of semiconductor integrated circuit devices present process challenges and are not fully applicable in all respects

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