Giant magnetoresistive devices, magneton field effect transistors and magneton tunnel junctions

Abstract

The invention relates to a giant magnetoresistance device, a magneton field effect transistor and a magneton tunnel junction. A giant magnetoresistance device may include: a first ferromagnetic insulating layer; a nonmagnetic conductive layer disposed on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer disposed on the nonmagnetic conductive layer Floor. A magneton field effect transistor may include: a first ferromagnetic region, a second ferromagnetic region and a third ferromagnetic region each formed of a ferromagnetic material, wherein the second ferromagnetic region is formed of a ferromagnetic insulating material forming; a first antiferromagnetic region, located between the first ferromagnetic region and the second ferromagnetic region, formed of an antiferromagnetic material; a second antiferromagnetic region, located in the second ferromagnetic region An antiferromagnetic material is formed between and the third ferromagnetic region; and a gate covers the second ferromagnetic region. Both ferromagnetic and antiferromagnetic materials can be made of metals, alloys, semiconductors and insulators.

Description

technical field [0001] The present invention generally relates to the field of magnetic devices, and more particularly relates to a giant magnetoresistance device based on a ferromagnetic insulating material, a magneton field effect transistor and a magneton tunnel junction. Background technique [0002] Since the discovery of tunneling magnetoresistance (TMR) in Fe / Ge / Co multilayers in 1975 and giant magnetoresistance (GMR) in magnetic multilayers in 1988, physics and materials in spintronics Scientific research and applications have made great progress, especially the tunneling transport properties of spin-related electrons in magnetic tunnel junctions and the tunneling magnetoresistance effect have become one of the important research fields in condensed matter physics. In 1995, Miyazaki et al. and Moderola et al. discovered the high room-temperature tunneling magnetoresistance effect in "ferromagnetic metal / Al-O insulating barrier / ferromagnetic metal", which set off a wa...

AI Technical Summary

Problems solved by technology

Although the all-metal spin transistor structure proposed by Johnson et al. has some excellent characteristics, it still uses electrons as signal carriers and uses magnetic moments to modulate electronic signals, and there are still many shortcomings in terms of signal strength and noise characteristics.

[0005] It can be seen that there are still many deficiencies in traditional magnetoelectric devices, which affect their practical application.

Images