High productivity PECVD tool for wafer processing of semiconductor manufacturing
A cluster tool, process chamber technology for semiconductor/solid-state device manufacturing, metal material coating processes, transportation and packaging, etc., to solve problems such as variable uniformity
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2018-06-08
- Estimated Expiration
- Not applicable · inactive patent
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] Embodiments of the disclosure generally relate to cluster tools for processing semiconductor substrates. Background technique
[0002] Substrate throughput has always been a challenge in semiconductor processing. Semiconductor substrates continue to need to be efficiently processed if technology is to advance. Cluster tools have been developed as an efficient means for processing multiple substrates simultaneously without interrupting the vacuum. Instead of processing a single substrate and then exposing the substrate to the atmosphere during transfer to another chamber, multiple processing chambers can be connected to a common transfer chamber so that when processing is completed on a substrate in one processing chamber, The substrate is simultaneously removed under vacuum to another processing chamber coupled to the same transfer chamber.
[0003] To further increase throughput and reduce costs, each processing chamber may be capable of processing...
Examples
Embodiment Construction
[0022] Embodiments of the disclosure generally relate to cluster tools for processing semiconductor substrates. In one embodiment, a cluster tool includes a plurality of processing chambers connected to a transfer chamber, and each processing chamber can process four or more substrates simultaneously. To reduce costs, each processing chamber includes: a substrate support for supporting four or more substrates; a single showerhead disposed above the substrate support ; and a single radio frequency power source electrically coupled to the showerhead. The showerhead may include a first surface facing the substrate support and a second surface opposite the first surface. A plurality of gas passages may be formed in the showerhead, the plurality of gas passages extending from the first surface to the second surface. Process uniformity is improved by increasing the density of gas passages from the center of the showerhead to the edge of the showerhead.
[0023] Figures 1A to 1D ...