A kind of preparation method of two-dimensional manganese iodide material

A technology of manganese iodide and transfer equipment, which is applied in the field of two-dimensional materials and multiferroic materials, can solve the problems of difficult application, unevenness, and small sample size, and achieve commercial development, simple operation, and easy control of conditions Effect

Inactive Publication Date: 2019-09-20
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method of mechanically exfoliating single crystal manganese iodide can obtain two-dimensional manganese iodide material, because the single crystal manganese iodide material itself has defects such as dislocations, it is easy to peel off the sample, and the sample is easy to be small in size and not uniform enough, which is very difficult to obtain. Difficult to move from laboratory to practical application

Method used

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  • A kind of preparation method of two-dimensional manganese iodide material
  • A kind of preparation method of two-dimensional manganese iodide material
  • A kind of preparation method of two-dimensional manganese iodide material

Examples

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Comparison scheme
Effect test

Embodiment 1

[0037] Step 1. Wipe a short glass tube with a diameter of 8mm and a length of 200mm with alcohol and dry it; place a 20mm×5mm×0.1mm silicon chip in Clean the beaker with a mixed solution of ethanol, acetone and isopropanol ultrasonically for 20 minutes, then rinse it with deionized water for 3 times, and use N with a purity (volume fraction) of not less than 99.999%. 2 Blow dry; put 0.3g of manganese iodide powder and silicon chip after ultrasonic cleaning into the short glass tube after wiping with alcohol, the manganese iodide powder is at one end of the short glass tube, the distance between the silicon chip and the manganese iodide powder Then put the short glass tube into the furnace tube of the dual temperature zone CVD tube furnace. The manganese iodide powder is located in the center of the first temperature zone, and the end of the second temperature zone far away from the silicon wafer is put into the furnace plug, close to the first temperature zone. One end of the ...

Embodiment 2

[0042] Step 1. Wipe a short glass tube with a diameter of 5.5mm and a length of 240mm with alcohol and dry it; place a 20mm×5mm×0.1mm silicon wafer After ultrasonic cleaning in a beaker of a mixed solution of ethanol, acetone and isopropanol for 15 minutes, rinse it with deionized water for 5 times, and use N with a purity (volume fraction) of not less than 99.999% 2 Blow dry and blow dry; put 0.6g of manganese iodide powder and ultrasonically cleaned silicon chip into a short glass tube wiped with alcohol, the manganese iodide powder is at one end of the short glass tube, between the silicon chip and the manganese iodide powder The distance is 140mm; then put the short glass tube into the furnace tube of the dual temperature zone CVD tube furnace, the manganese iodide powder is located in the center of the first temperature zone, and the end of the second temperature zone far away from the silicon wafer is put into the furnace plug, close to One end of the furnace tube in the...

Embodiment 3

[0047] Step 1. Wipe a short glass tube with a diameter of 15mm and a length of 160mm with open ends with alcohol and dry it; place a 20mm×5mm×0.1mm silicon wafer in a Clean the beaker with a mixed solution of ethanol, acetone and isopropanol ultrasonically for 30 minutes, rinse it with deionized water three times, and use N with a purity (volume fraction) of not less than 99.999%. 2 Blow dry and blow dry; put 0.1g of manganese iodide powder and ultrasonically cleaned silicon chip into a short glass tube wiped with alcohol, the manganese iodide powder is at one end of the short glass tube, between the silicon chip and the manganese iodide powder The distance is 70mm; then put the short glass tube into the furnace tube of the dual-temperature zone CVD tube furnace, the manganese iodide powder is located in the center of the first temperature zone, and the end of the second temperature zone far away from the silicon wafer is put into the furnace plug, close to One end of the furn...

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Abstract

The invention relates to a preparation method of a two-dimensional manganese iodide material, and belongs to the technical field of two-dimensional materials and multiferroic materials. In the preparation method, a manganese iodide film layer is prepared with a chemical vapor deposition method, and the film crystallization condition is controlled through the reaction temperature, the argon-hydrogen flow and the air pressure, so that control is easy; besides, after the reaction is finished, a sample is transferred out and put into a glove box without damaging the vacuum, so that the sample is protected from hydrolysis, and the original appearance of the sample is maintained to the greatest extent. The prepared manganese iodide film layer is large in size and good in component uniformity, the thickness is controlled within 100 nanometers, and the manganese iodide film layer maintains the multiferroic property and has good application in the field of two-dimensional multiferroic materials.

Description

technical field [0001] The invention relates to a method for preparing a two-dimensional manganese iodide material by using a chemical vapor deposition method, and belongs to the technical field of two-dimensional materials and multiferroic materials. Background technique [0002] Ferroic materials are materials with many different properties including ferromagnetic, ferroelectric, and ferroelastic. They have a wide range of applications in the fields of magnetic storage, information transmission, and automatic control. Since ferroic materials mostly involve the concept of domains, and the size of domains is generally much larger than the atomic scale, most ferroic materials are three-dimensional materials. Recently studied ferroic materials with a van der Waals layered structure include Cr 2 Ge 2 Te 6 、Cr 2 Si 2 Te 6 and CrI 3 etc., their three-dimensional materials all have obvious ferromagnetic properties. Experiments have shown that when the above three-dimensio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G45/06B82Y40/00
Inventor 韩俊峰卓拉李永恺肖文德姚裕贵
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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