Power module HTRB (high temperature reverse bias) reliability test system

Abstract

The present invention provides a power module HTRB (high temperature reverse bias) reliability test system. The system comprises a cabinet as well as a control mechanism and test module sets, the control mechanism and the test module sets are arranged on the cabinet, the control mechanism is in communication connection with the test module sets; the control mechanism includes a main controller disposed on the cabinet, an input / output module connected with the main controller and a test module connected with the main controller; and each test module set includes a control detection circuit, a power source module and at least one drawer type superconducting thermostatic bath structure, wherein the control detection circuit and the power source module are disposed on the cabinet and are in communication connection with the test module, the at least one drawer type superconducting thermostatic bath structure is connected with the control detection circuit and the power source module, the at least one drawer type superconducting thermostatic bath structure is used for accommodating an IPM (Intelligent Power Module) or an IGBT (Insulated Gate Bipolar Transistor) module, and the control detection circuit and the power source module are used for performing control testing on the IPM or IGBT module. The power module HTRB (high temperature reverse bias) reliability test system provided by the invention is suitable for IPM and IGBT electrical reliability test. The operability, stability and efficiency of the system all satisfy the requirements of large-scale production.

Description

Technical field [0001] The invention relates to the technical field of electronic device testing, in particular to a power module HTRB reliability testing system. Background technique [0002] HTRB (high temperature reverse bias, that is, high temperature reverse bias test) is one of the most basic laboratory test items in semiconductor devices (eg, routine test, screening test), IPM (Intelligent Power Module, that is, intelligent power module), IGBT (Insulated Gate Bipolar Transistor), as a new type of device developed, is widely used in air conditioners, motors, new energy vehicles and other fields, and its reliability control is relative to traditional semiconductor devices (diodes, triodes, MOS tubes, etc.) In terms of still being explored. Therefore, in the current modular production of IPM and IGBT, it is a common practice to move the HTRB test project to the production process, in order to eliminate product defects during the production process, move the quality control f...

AI Technical Summary

Problems solved by technology

[0003] However, in the traditional technology, various related manufacturers have been focusing on aging screening and routine tests of traditional semiconductor devices (diodes, triodes, MOS tubes, etc.) It cannot be used for IPM and IGBT electrical reliability tests, and the operability, stability, and efficiency of traditional test systems are not suitable for actual production applications

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