High-power bipolar pulse formation circuit integrated with high-voltage burst pulse preionization

Abstract

The invention discloses a high-power bipolar pulse formation circuit integrated with high-voltage burst pulse preionization. The high-power bipolar pulse formation circuit integrated with high-voltageburst pulse preionization is formed by a negative polarity high-voltage burst pulse formation circuit, a high-power negative polarity low-voltage main pulse formation circuit, a positive polarity low-voltage pulse formation circuit and a magnistor, wherein the negative polarity high-voltage burst pulse is used to implement preionization processing on a plasma load; and the bipolar high-power pulse is used for sputtering of target materials, thus being able to instantly adapt to the characteristic of load impedance change. In the high-power bipolar pulse formation circuit integrated with high-voltage burst pulse preionization, the output high-power pulse duty ratio is much greater than the duty ratio of the negative polarity high-voltage preionization pulse; the magnetron sputtering and coating power supply efficiency and the target material sputtering and coating efficiency are improved; and the power supply volume is reduced. The high-power bipolar pulse formation circuit integratedwith high-voltage burst pulse preionization is used for solving the problem that the power supply volume is larger, and the efficiency is lower and the target particle deposition rate is low.

Description

technical field [0001] The invention belongs to the technical field of surface treatment research on electronic circuits and magnetron sputtering materials, and in particular relates to an integrated high-power bipolar pulse forming circuit integrating high-voltage short pulse pre-ionization. Background technique [0002] In recent years, magnetron sputtering technology, as a kind of vacuum sputtering, has become one of the widely used technologies for hard coating preparation due to its unique advantages, such as low deposition temperature, high film density and easy control of film thickness. one. Magnetron sputtering technology is divided into DC magnetron sputtering and high-power pulse magnetron sputtering according to the output voltage mode of magnetron sputtering power supply. Because high-power pulsed magnetron sputtering technology has two advantages: high ionization rate of sputtered particles and the ability to deposit very dense and high-performance thin films,...

AI Technical Summary

Problems solved by technology

In most cases, a single high-power unipolar generating circuit and a bipolar pulse forming circuit cannot adapt to changes in the plasma load impedance characteristics

At present, the pulse forming circuit with the characteristics of high-power pulse peak and DC form pretreatment can well adapt to the characteristics of load impedance changes. This circuit relies on the DC part to realize the arc pretreatment of the load plasma, and the high-power pulse is used for the target. Sputtering of materials, but because the duty cycle of the high-power pulse is less than that of the DC part, the power supply is larger and the efficiency is lower; the voltage of the DC part is generally relatively low and cannot effectively pre-ionize the plasma load. In practical applications Relatively low particle deposition rate and low target sputtering efficiency

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