Hybrid acoustic wave resonator of bulk acoustic wave resonator and surface acoustic wave resonator

A technology of bulk acoustic wave resonators and acoustic wave resonators, which is applied in the field of hybrid acoustic wave resonators, can solve problems such as cracking and warping, achieve the effect of reducing the process flow and avoiding piezoelectric substrate cracking or serious warping

Pending Publication Date: 2018-06-15
WUHAN YANXI MICRO COMPONENTS CO LTD
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many ways to suppress lateral parasitic modes. The traditional process of integrating thin-film bulk acoustic wave resonators (BAW for short) and surface acoustic wave resonators (SAW for short) uses the acoustic wave substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hybrid acoustic wave resonator of bulk acoustic wave resonator and surface acoustic wave resonator
  • Hybrid acoustic wave resonator of bulk acoustic wave resonator and surface acoustic wave resonator
  • Hybrid acoustic wave resonator of bulk acoustic wave resonator and surface acoustic wave resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] This embodiment provides a hybrid acoustic wave resonator of a bulk acoustic wave resonator and a surface acoustic wave resonator, such as figure 1 As shown, it includes: a substrate 105, a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101 arranged in sequence from bottom to top, and a first air cavity 1041 is formed between the substrate 105 and the bottom electrode 103, thereby forming a bulk acoustic wave resonator ; An interdigital electrode 106 is formed on the same piezoelectric layer 102, and a second air cavity 1042 is formed between the substrate 105 and the piezoelectric layer 102, thereby forming a surface acoustic wave resonator. The interdigital electrode 106 is a finger-like or comb-like electrode with a periodic pattern in its plane.

[0019] Both the first air cavity 1041 and the second air cavity 1042 are raised air cavities, and may also be a combination of different reflective surfaces.

[0020] Preferably, in the surface acous...

Embodiment 2

[0023] This embodiment provides a hybrid acoustic wave resonator of a bulk acoustic wave resonator and a surface acoustic wave resonator, such as figure 2 As shown, it includes: a substrate 205, a bottom electrode 203, a piezoelectric layer 202, and a top electrode 201 arranged in sequence from bottom to top, and a first air cavity 2041 is formed between the substrate 205 and the bottom electrode 203, thereby forming a bulk acoustic wave resonator ; Interdigital electrodes 206 are formed on the same piezoelectric layer 202, and a second air cavity 2042 is formed between the substrate 205 and the piezoelectric layer 202, thereby forming a surface acoustic wave resonator. The interdigital electrode 206 is a finger-like or comb-shaped electrode with a periodic pattern in its plane.

[0024] Both the first air cavity 2041 and the second air cavity 2042 are air cavities formed by etching holes on the substrate, and may also be a combination of different reflective interfaces.

[...

Embodiment 3

[0028] This embodiment provides a hybrid acoustic wave resonator of a bulk acoustic wave resonator and a surface acoustic wave resonator, such as image 3 As shown, it includes: a substrate 305, a bottom electrode 303, a piezoelectric layer 302, and a top electrode 301 arranged in sequence from bottom to top, and the substrate 305 and the bottom electrode 303 are formed by overlapping materials with high acoustic resistance and low acoustic resistance. The Bragg reflector 307 is formed to form a bulk acoustic wave resonator; the interdigitated electrodes 306 are formed on the same piezoelectric layer 302 to form a surface acoustic wave resonator. The interdigital electrode 306 is a finger-like or comb-like electrode with a periodic pattern in its plane.

[0029] In this embodiment, the first reflective layer and the second reflective layer can be integrated, that is, only one Bragg reflector 307 formed by overlapping materials with high acoustic resistance and low acoustic res...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a hybrid acoustic wave resonator of a bulk acoustic wave resonator and a surface acoustic wave resonator, which comprises a base, a bottom electrode, a piezoelectric layer and atop electrode which are sequentially arranged from bottom to top; a first reflecting layer is formed between the substrate and the bottom electrode so as to form a bulk acoustic wave resonator; an interdigital electrode is formed on the same piezoelectric layer; and a second reflection layer is formed between the substrate and the piezoelectric layer so as to form a surface acoustic wave resonator. According to hybrid acoustic wave resonator in the invention, through an integration process, the top electrode of the bulk acoustic wave resonator and the interdigital electrode of the surface acoustic wave resonator are directly formed on the same piezoelectric layer; the process flow is reduced; the phenomenon that the piezoelectric substrate is broken or severely warped in the original process is avoided; meanwhile, the parameters of the surface acoustic wave resonator can be adjusted so that the effects of restraining the transverse parasitic mode of the bulk acoustic wave resonator and inhibiting sound wave frequency doubling are achieved.

Description

technical field [0001] The invention belongs to the field of resonators, in particular to a hybrid acoustic wave resonator of a bulk acoustic wave resonator and a surface acoustic wave resonator. Background technique [0002] With the evolution of the communication frequency band, the required frequency is getting higher and higher. Under the high frequency requirement, the resonator needs to provide a better Q value to reduce the loss of the filter and obtain a higher quality filter response. . [0003] There are many ways to suppress lateral parasitic modes. The traditional process of integrating thin-film bulk acoustic wave resonators (BAW for short) and surface acoustic wave resonators (SAW for short) uses the acoustic wave substrate as the piezoelectric layer of the BAW device and integrates the SAW device. On the same substrate, but often due to the high temperature environment in the process, the piezoelectric substrate (for example: LiTaO 3 ) cracks or severe warpi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03H9/02H03H9/05H03H9/17
CPCH03H9/02015H03H9/02047H03H9/0504H03H9/058H03H9/171H03H2003/023
Inventor 廖珮淳
Owner WUHAN YANXI MICRO COMPONENTS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap