Three-dimensional picture displaying system
A display system and stereoscopic image technology, applied in the field of image processing, can solve problems such as poor mobility, limited usage scenarios, inconvenient use, etc., and achieve the effect of convenient use
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Embodiment 1
[0031] See figure 1 , figure 1 A schematic structural diagram of a stereoscopic image display system provided by the present invention, which includes:
[0032] Graphics processor, LED rotating screen, stream generator, motor;
[0033] The graphics processor is electrically connected to the code stream generator and the LED rotating screen; the code stream generator is used to receive and process the image input signal to generate a 3D code stream, and transmit the 3D code stream to the graphics processor;
[0034] The graphics processor is used to process the 3D code stream and form real-time image information, and send the real-time image information to the LED rotating screen;
[0035] The LED rotating screen is connected to the motor through a rotating shaft, and the rotating shaft is used to drive the LED rotating screen to rotate and form a three-dimensional image.
[0036] This embodiment uses the persistence of vision effect of the human eye, and the rotating stere...
Embodiment 2
[0049] In this embodiment, on the basis of the first embodiment, the LED chips used in the LED display panel of the first embodiment are described in detail.
[0050] Such as Figure 5 as shown, Figure 5 It is a schematic structural diagram of an LED chip provided by the present invention, and the LED chip is suitable for the LED display panel in the first embodiment. Specifically, the chip includes:
[0051] Substrate (11);
[0052] At least one blue light material and at least one red light material are both grown on the substrate (11).
[0053] Further, on the basis of the above embodiment, the chip further includes an isolation wall for isolating the blue light material and the red light material.
[0054] Further, on the basis of the above implementation manner, the chip further includes electrodes disposed on the blue light material and the red light material. Specifically, see Figure 6 , Figure 6 It is a schematic structural diagram of another LED chip provided ...
Embodiment 3
[0062] This embodiment further describes the detailed structures or parameters of the red light material and the blue light material.
[0063] In one embodiment, the thickness of the first GaN buffer layer (101) is 3000-5000 nm, the growth temperature is 400-600°C, in another embodiment, the growth temperature is 500°C, and the thickness is 4000 nm. Nano.
[0064] In one embodiment, the growth temperature of the GaN stable layer (102) is 900-1050° C., and the thickness is 500 nm-1500 nm. In another embodiment, the growth temperature is 1000° C., and the thickness is 1000 nm.
[0065] In one embodiment, the growth temperature of the n-type GaN layer (103) is 900-1050° C., the thickness is 200-1000 nanometers, the doping method is: Si doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 ; In another embodiment, the growth temperature is 1000°C, the thickness is 400 nm, and the doping concentration is 1×10 19 cm -3 .
[0066] In one embodiment, the growth temperat...
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