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Method for segregating and purifying high-purity silicon

A high-purity, solid-state silicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve problems such as inconvenient, expensive, and time-consuming processes

Inactive Publication Date: 2018-06-29
孙文彬 +2
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Problems solved by technology

[0005] Furthermore, directional solidification and separation purification is a very expensive process, and it is quite time-consuming. It needs several times of directional solidification and separation purification to achieve the purity target. In each separation process, the top needs to be cut off. Concentrated parts of impurities, causing inconvenience in the process

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  • Method for segregating and purifying high-purity silicon

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Embodiment Construction

[0019] In order to have a clearer understanding of the technical features, purposes and beneficial effects of the present invention, the technical solution of the present invention will be described in detail below in conjunction with the following specific examples, but it should not be construed as limiting the scope of the present invention.

[0020] see figure 1 , which is a flow chart of the method for purifying high-purity silicon by segregation provided in this embodiment.

[0021] This embodiment provides a method for segregation and purification of high-purity silicon, which is to carry out segregation and solidification purification in the crucible of the heating furnace to quickly remove impurities in the purification process to achieve the target purity. This method includes the following steps Step 1 to Step 3.

[0022] Step 1: Put solid silicon into the crucible, heat and melt to form liquid silicon.

[0023] Step 2: Then maintain the temperature of the crucibl...

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Abstract

The invention provides a method for segregating and purifying high-purity silicon, which is an efficient, low-cost and simple operation method for removing impurities, can eliminate the complicated procedures required for cutting, and is a metallurgical polysilicon dephosphorization purification method especially suitable for large-scale industrial production. The method can make the purity of polycrystalline silicon achieve the high purity requirement of solar grade polycrystalline silicon faster than the conventional technology. The method performs segregation solidification purification ina crucible of a heating furnace, which heats or maintains the temperature in the top of the crucible of the heating furnace to control the solidification speed of the liquid silicon at the top being slower than the solidification speed of the liquid silicon below, and when the remaining liquid silicon on the top is 5% to 20% of the whole, the liquid metal silicon is poured out. After repeating this step, the purity of the fixed silicon after solidification reaches the target value.

Description

technical field [0001] The invention relates to a method for purifying silicon, in particular to a method for removing impurities through segregation. Background technique [0002] Solar energy has become one of the environmentally friendly energy sources encouraged by the state. Among them, polysilicon is the basic material of the solar photovoltaic industry. Therefore, how to manufacture suitable polysilicon materials is one of the most important research and development directions at present. [0003] Industrial silicon is an important raw material for the production of solar-grade polysilicon, but its purity is about 99%, and it must be purified to remove impurity elements in it, so that the manufactured wafers can produce the best power conversion efficiency. Among them, directional solidification and separation purification is an existing technology that can achieve high purity. [0004] Among polysilicon materials, the impurities that take the most time to remove are...

Claims

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Application Information

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IPC IPC(8): C01B33/037
CPCC01B33/037
Inventor 孙文彬
Owner 孙文彬
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