Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method of controlling the growth of metal nanorods

A technology of metal nano and metal islands, applied in the direction of nanotechnology, metal material coating process, vacuum evaporation plating, etc., can solve the problems of single raw material, irregularity, and high purity of metal nanorods, and achieve controllable effects. The effect of uniform diameter size distribution and simple operation

Active Publication Date: 2020-02-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Inclined growth is easy to operate and has a single raw material. Metal nanorods can be synthesized by using high-purity raw materials for epitaxial growth in a high-vacuum environment. The purity of the product is also guaranteed; and, the final growth morphology of the metal nanorods can be controlled to a certain extent by adjusting the two experimental conditions of the growth temperature and the incident angle of the deposited atoms, but this control is not regular, and the growth parameters It is unpredictable that a slight change will change the shape of the final metal nanorods
The document "Smallest Metallic Nanorods Using Physical Vapor Deposition" reports a method based on oblique growth of copper metal nanorods, but from the relevant description on page 4 of the document, it can be seen that the diameter of the copper metal nanorods prepared by this method is about 20nm , but by observing image 3 and Figure 4 It can be seen that due to the randomness of early nucleation, there are also a large number of copper nanorods distributed in other sizes
Therefore, it is currently impossible to precisely control the diameter of the product and obtain regular distribution of metal nanorods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method of controlling the growth of metal nanorods
  • A method of controlling the growth of metal nanorods
  • A method of controlling the growth of metal nanorods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The simulation experiment based on the kinetic Monte Carlo model specifically includes the following steps:

[0043] Step 1: Define a layer of substrate with a metal island array on the metal nanorod dynamics Monte Carlo model substrate according to the nanopatterning technology based on photolithography. The metal island array consists of several identical and uniformly distributed square Composed of metal islands, the size of the square metal islands is 3nm, and the distance between the metal islands is 15.5nm;

[0044] Step 2: Set the basic physical parameters of copper in the metal nanorod dynamics Monte Carlo model (the diffusion barrier is 0.06eV, the two-dimensional step barrier is 0.16eV, the three-dimensional step barrier is 0.40eV, and the vibration frequency pre-factor setting 5×10 12 s-1);

[0045] Step 3: Set the growth parameters in the metal nanorod dynamics Monte Carlo model: the temperature is 300K, the deposition rate is 8nm / s, the deposition inciden...

Embodiment 2

[0048] The simulation experiment based on the kinetic Monte Carlo model specifically includes the following steps:

[0049] Step 1: Define a layer of substrate with a metal island array on the metal nanorod dynamics Monte Carlo model substrate according to the nanopatterning technology based on photolithography. The metal island array consists of several identical and uniformly distributed square Composed of metal islands, the size of the square metal islands is 3nm, and the distance between the metal islands is 15.5nm;

[0050] Step 2: Set the basic physical parameters of copper in the metal nanorod dynamics Monte Carlo model (the diffusion barrier is 0.06eV, the two-dimensional step barrier is 0.16eV, the three-dimensional step barrier is 0.40eV, and the vibration frequency pre-factor setting 5×10 12 s-1);

[0051] Step 3: Set the growth parameters in the metal nanorod dynamics Monte Carlo model: the temperature is 300K, the deposition rate is 8nm / s, the deposition inciden...

Embodiment 3

[0054] The simulation experiment based on the kinetic Monte Carlo model specifically includes the following steps:

[0055] Step 1: Define a layer of substrate with a metal island array on the metal nanorod dynamics Monte Carlo model substrate according to the nanopatterning technology based on photolithography. The metal island array consists of several identical and uniformly distributed square Composed of metal islands, the size of the square metal islands is 3nm, and the distance between the metal islands is 15.5nm;

[0056] Step 2: Set the basic physical parameters of copper in the metal nanorod dynamics Monte Carlo model (the diffusion barrier is 0.06eV, the two-dimensional step barrier is 0.16eV, the three-dimensional step barrier is 0.40eV, and the vibration frequency pre-factor setting 5×10 12 s-1);

[0057] Step 3: Set the growth parameters in the metal nanorod dynamics Monte Carlo model: the temperature is 200K, the deposition rate is 8nm / s, the deposition inciden...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
angleaaaaaaaaaa
Login to View More

Abstract

A method for controlling the growth of metal nanorods belongs to the technical field of nanomaterial preparation. The present invention is based on the Monte Carlo model of lattice dynamics of metal nanorods, by first forming nanoscale metal islands in the target area of ​​the substrate, and then combining the vapor phase physical deposition technology of inclined growth to simulate and simulate the diameter of metal nanorods under specific growth parameters There is a linear relationship between the nanoscale metal island pitch and the nanoscale metal island spacing; so that when the inclined growth physical vapor deposition technology is actually used to epitaxially grow the nanoscale metal islands pre-deposited on the target area of ​​the substrate, there is no need to adjust the incident angle of the deposition particles , deposition temperature, deposition rate and other growth parameters to control the final growth morphology of metal nanorods, and only need to adjust the spacing of pre-deposited nanoscale metal islands according to the known linear relationship to obtain a metal nanorod array with the target diameter.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a method for controlling the growth of metal nanorods. Background technique [0002] Nanomaterials usually refer to materials with at least one dimension in the order of 1-500nm. At this size, due to the existence of various nano-effects, the materials show many excellent properties different from ordinary materials. Therefore, in the past more than half a century, nanomaterials have attracted many researchers to engage in research, and have driven more and more scientific workers to find and discover more nanomaterials. [0003] When people are looking for various nanomaterials and studying their practical applications, metal nanorods, as a kind of nanomaterials, have naturally received extensive attention and research. For example: metal copper is an important interconnect material in the current silicon-based semiconductor industry, and its material propertie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/14C23C14/54B82Y40/00
CPCB82Y40/00C23C14/14C23C14/54
Inventor 杨锦牛晓滨陈海元郭恒周亚君蒲冰雪
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products