Semiconductor device forming method

Abstract

A semiconductor device forming method includes: forming a gate stack over a substrate; growing a source / drain region adjacent the gate stack, wherein the source / drain region being n-type doped Si; growing a semiconductor cap layer over the source / drain region, the semiconductor cap layer having Ge impurities, the source / drain region are free of the Ge impurities; depositing a metal layer over thesemiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source / drain region, wherein the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor technology, and in particular to the structure of a semiconductor device and its manufacturing method. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are usually manufactured by sequentially depositing insulating or dielectric layers, conductive layers and semiconducting layers of materials on a semiconductor substrate, and patterning the various material layers using photolithography and etching processes to form circuit components and components on the semiconductor substrate. [0003] The semiconductor industry continuously improves the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.) by continuously reducing the size of the smallest components, so that more component...

AI Technical Summary

Problems solved by technology

However, as the size of the smallest components shrinks, additional issues arise in every process used that should be overcome

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