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Ultra-fast recovery diode structure and implementation method

A recovery diode, ultra-fast technology, used in electrical components, circuits, semiconductor devices, etc.

Inactive Publication Date: 2018-07-03
WUXI THUNDER MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In summary, there is a contradictory relationship between the reverse recovery speed and the recovery softness of the ultrafast recovery diodes in the prior art

Method used

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  • Ultra-fast recovery diode structure and implementation method
  • Ultra-fast recovery diode structure and implementation method
  • Ultra-fast recovery diode structure and implementation method

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Experimental program
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Embodiment 1

[0030] Such as Figure 5-Figure 7 An ultrafast recovery diode structure is shown, including an anode metal layer 1, an anode P-type heavily doped silicon layer 3, an anode P-type doped silicon layer 4, and a cathode N-type lightly doped silicon layer stacked in sequence along the left and right longitudinal directions. 5. N-type doped silicon layer 6 , cathode N-type heavily doped silicon layer 7 and cathode metal layer 8 , and anode P-type heavily doped silicon layer 3 is provided with several embedded doping blocks 2 .

[0031] The embedded doping block 2 is embedded in the anode P-type heavily doped silicon layer 3 from the layer of the anode P-type heavily doped silicon layer 3 facing the anode metal layer 1, and the anode P-type heavily doped silicon layer 3 Several embedding doping blocks 2 are evenly embedded in the layer facing the anode metal layer 1, and the embedding doping blocks 2 are N-type heavily doped silicon.

Embodiment 2

[0033] The method for realizing the described ultrafast recovery diode structure comprises the following steps:

[0034] Step 1: Epitaxially grow the cathode N-type lightly doped silicon layer 5 and the N-type doped silicon layer 6 on the left side of the cathode N-type heavily doped silicon layer 7;

[0035] Step 2: Doping P-type impurities on the left side of the cathode N-type lightly doped silicon layer 5 to form an anode P-type doped silicon layer 4;

[0036] Step 3: Doping P-type heavily doped silicon on the left side of the anode P-type doped silicon layer 4 to form an anode P-type heavily doped silicon layer 3; the concentration of the anode P-type heavily doped silicon layer 3 is higher than that of the anode P-type The doped silicon layer 4 is 1-2 orders of magnitude larger;

[0037] Step 4: uniformly embed the several embedded doping blocks 2 on the layer of the anode P-type heavily doped silicon layer 3 facing the anode metal layer 1, and the embedded doping block...

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Abstract

The invention discloses an ultra-fast recovery diode structure and an implementation method thereof and belongs to the electronic component technical field. The ultra-fast recovery diode structure comprises an anode metal layer (1), an anode P type heavily doped silicon layer (3), an anode P type doped silicon layer (4), a cathode N type lightly doped silicon layer (5), an N type doped silicon layer (6), a cathode N type heavily doped silicon layer (7) and a cathode metal layer (8) which are sequentially and longitudinally stacked in a left-right direction. With the ultra-fast recovery diode structure and the implementation method thereof of the invention adopted, the fast recovery capability of a punch-through (PT) epitaxial structure can be retained, and at the same time, a reverse recovery softness factor can be improved.

Description

technical field [0001] The invention belongs to the technical field of electronic components. Background technique [0002] Ultrafast recovery diodes have a wide range of applications. Ultrafast recovery diodes play the role of freewheeling, buffering, and absorption in power electronic circuits; at the same time, ultrafast recovery diodes play rectification in high-frequency power electronic circuits. [0003] Ultrafast recovery diodes in the prior art include the first ultrafast recovery diode and the second ultrafast recovery diode: [0004] Such as figure 1 and figure 2 As shown, the first ultrafast recovery diode includes an anode metal 9, an anode P-type doped silicon 10, a cathode N-type lightly doped silicon 11, a cathode N-type heavily doped silicon 12, and a cathode metal 13. The first ultrafast recovery diode The vertical doping distribution of the recovery diode is a punch-through epitaxial structure (PT); [0005] In the first type of ultra-fast recovery di...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0603H01L29/6609H01L29/861
Inventor 詹小勇黄昌民
Owner WUXI THUNDER MICROELECTRONICS CO LTD