Linear electromagnetic wave plasma source and plasma processing apparatus employing same

Abstract

The invention provides a linear electromagnetic wave plasma source and a plasma processing apparatus employing the same. The plasma processing apparatus includes: an elongated cylindrical waveguide; adielectric layer surrounding the cylindrical waveguide in contact with an outer surface of the cylindrical waveguide; and first and second magnetrons for supplying electromagnetic waves to both endsof the cylindrical waveguide, wherein the cylindrical waveguide includes at least two slots formed in a longitudinal direction. When the linear electromagnetic plasma source and the plasma processingapparatus using the same are used, the thickness of the dielectric layer arranged to maintain a pressure difference between the inside and the outside of the circular waveguide can be made thin by using the cylindrical waveguide. Thus, the attenuation of the electromagnetic wave radiated from the cylindrical waveguide is reduced so that the intensity of the electromagnetic wave can be increased.

Description

technical field [0001] The present invention relates to a linear electromagnetic wave plasma source, that is, a plasma processing apparatus using the same. More specifically, the present invention relates to a plasma source and a plasma processing apparatus using the plasma source for an object to be processed: a circle with open sides is provided. A circular waveguide and a circular dielectric tube that surrounds it in a close-fitting manner. Electromagnetic waves are transmitted to the interior of the circular waveguide through multiple magnetrons located on both sides of the circular waveguide, and the multiple magnetrons formed in the circular waveguide Each slit emits electromagnetic waves through the dielectric layer, thereby generating plasma. Background technique [0002] Generally, plasma is defined as the fourth substance that is not solid, liquid and gas, and is a part of the gas that is ionized. There are free electrons, cations, neutrals and central molecules in...

AI Technical Summary

Problems solved by technology

In this case, the magnetron is installed only on one side, and there is a problem that the intensity of the electromagnetic wave at the inflow part into which the electromagnetic wave flows cannot be maintained uniformly. The plasma source is installed outside the chamber in a manner separated from the chamber. Therefore, there is a problem that the strength and efficiency of electromagnetic waves transmitted to the processed object located inside the chamber are reduced.

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