Vertical double diffusion metal-oxide-semiconductor power device with high voltage start-up unit

Abstract

The invention discloses a vertical double diffusion metal-oxide-semiconductor power device with high voltage start-up unit. The vertical double diffusion metal-oxide-semiconductor power device includes a vertical double diffusion metal-oxide-semiconductor power transistor and the high voltage start-up unit. The vertical double diffusion metal-oxide-semiconductor power transistor includes a first metal layer, a substrate layer, an epitaxy layer, a second metal layer, and a plurality of polysilicon layers. The substrate layer is formed on the first metal layer. The epitaxy layer is formed on thesubstrate layer. The plurality of polysilicon layers are formed on the epitaxy layer. The high voltage start-up unit is formed on the epitaxy layer, wherein the high voltage start-up unit is used forproviding a two-dimensional direction start-up current to the vertical double diffusion metal-oxide-semiconductor power device. Accordingly, the vertical double diffusion metal-oxide-semiconductor power device can normally work in a short time.

Description

technical field [0001] The invention relates to a vertical double-diffusion metal oxide semiconductor power element, in particular to a vertical double-diffusion metal oxide semiconductor power element with a high-voltage starting unit. Background technique [0002] In the prior art, when an integrated circuit is powered on, a high-voltage start-up unit in the integrated circuit will generate a start-up current to charge a predetermined capacitor, wherein the predetermined capacitor will generate a start-up voltage according to the start-up current Other functional units within the integrated circuit are activated. However, because the start-up current is very small, the predetermined capacitor will take a long time to generate the start-up voltage, that is to say, it may take a long time for the integrated circuit to operate normally, or it may be generated too slowly. The starting voltage causes the integrated circuit to fail to start. Therefore, how to increase the star...

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Problems solved by technology

However, because the start-up current is very small, the predetermined capacitor will take a long time to generate the start-up voltage, that is to say, it may take a long time for the integrated circuit to operate normally, or it may be generated too slowly. The starting voltage causes the integrated circuit to fail to start

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