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MOS capacitor and its formation method

A capacitance and potential technology, applied in the field of MOS capacitors and their formation, can solve problems such as poor performance of MOS capacitors

Active Publication Date: 2021-06-08
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, existing MOS capacitors are still susceptible to the influence of the external environment, making the performance of MOS capacitors poor

Method used

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  • MOS capacitor and its formation method

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Experimental program
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Effect test

Embodiment Construction

[0027] There are many problems in the existing semiconductor structure, for example, the performance of the MOS capacitor is poor.

[0028] The reasons for the poor performance of the MOS capacitors will be analyzed below with reference to the accompanying drawings.

[0029] figure 1 with figure 2 It is a schematic diagram of the structure of a MOS capacitor.

[0030] Please refer to figure 1 with figure 2 , figure 2 yes figure 1 In the cross-sectional view along the cutting line 11-12, the MOS capacitor includes: a substrate 100, the substrate 100 includes a device region A and a protection region B adjacent to each other, and the device region A and the protection region B on the substrate 100 have Fin 101; an isolation structure 102 located on the substrate 100, the surface of the isolation structure 102 is lower than the top surface of the fin 101; a gate structure 110 across the device region A fin 101, the A gate structure 110 covers part of the sidewall and to...

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Abstract

The present invention provides a MOS capacitor and its forming method, wherein the MOS capacitor includes: a substrate, the substrate includes a device region and a protection region adjacent to each other; a gate structure located on the substrate of the device region; Source-drain doped regions in the device region substrate on both sides of the gate structure; a dummy gate structure located on the substrate in the protection region; a conductive structure connecting the source-drain doped region and the dummy gate structure . The MOS capacitor includes a conductive structure connecting the dummy gate structure and the source-drain doped region, then the potential on the dummy gate structure is a stable potential. When the external environment changes, the dummy gate structure will The potential of the dummy gate structure is not easy to change, and the voltage between the dummy gate structure and the substrate is not easy to change, so that it is not easy to affect the capacitance between the gate structure and the substrate, thereby ensuring the accuracy of the capacitance value of the MOS capacitor and improving MOS capacitor performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a MOS capacitor and a forming method thereof. Background technique [0002] With the development of mobile communication technology, the research of radio frequency (RF) circuit has attracted extensive attention. Implementing a voltage-controlled oscillator (VCO) using a standard CMOS process is the key to realizing an RF CMOS integrated transceiver. In the past, most voltage-controlled oscillator circuits used reverse-biased varactor diodes as voltage-controlled devices. However, when implementing circuits with actual processes, it was found that the quality factor of varactor diodes was usually very small, which would affect the performance of the circuit. performance. Therefore, people try to use other devices that can be realized by CMOS technology to replace ordinary varactor diodes, and MOS capacitors came into being. [0003] Shorting the drain and s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/94H01L21/02
CPCH01L29/66181H01L29/94
Inventor 吴健
Owner SEMICON MFG INT (SHANGHAI) CORP