High-transmission terahertz phase shifter based on metamaterials

A high transmission, terahertz technology, applied in the field of terahertz wave phase shifters, to achieve the effect of simple design principle, low loss and simple structure

Active Publication Date: 2018-07-13
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the current level of digital circuit development, DDS synthesis of terahertz waves faces great challenges, and it is necessary to explore new phase-shifting preprocessing methods

Method used

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  • High-transmission terahertz phase shifter based on metamaterials
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  • High-transmission terahertz phase shifter based on metamaterials

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Embodiment 1

[0017] In this embodiment, the structure of the metamaterial-based high-transmission terahertz phase shifter is as described above ( Figure 1~2 ),No longer. However, the specific parameters of each component are as follows: the silicon base layer 1 has a width of 56 μm, a length of 56 μm, and a thickness of 48 μm. The first dielectric layer 2 of BCB material has a length of 56 μm, a width of 56 μm, and a thickness of 6.5 μm. The second dielectric layer 4 of BCB material has a length of 56 μm, a width of 56 μm, and a thickness of 32 μm. The third dielectric layer 6 of BCB material has a length of 56 μm, a width of 56 μm, and a thickness of 9 μm. The fourth dielectric layer 8 of BCB material has a length of 56 μm, a width of 56 μm, and a thickness of 68 μm. The material of each layer of non-split ring resonant structure is metal aluminum film, the overall length is 56 μm, the overall width is 56 μm, and the overall thickness is 0.3 μm; the first unsplit ring resonant structu...

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Abstract

The invention discloses a high-transmission terahertz phase shifter based on metamaterials. The high-transmission terahertz phase shifter comprises a silicon-based bottom layer, three split-ring-freeresonant structure layers and four BCB (benzocyclobutene) material dielectric layers, wherein the first BCB material dielectric layer is attached onto the silicon-based bottom layer, and the first split-ring-free resonant structure layer, the second BCB material dielectric layer, the second split-ring-free resonant structure layer, the third BCB material dielectric layer, the third split-ring-freeresonant structure layer and the fourth BCB material dielectric layer are sequentially arranged on the first BCB material dielectric layer. Each split-ring-free resonant structure layer is clamped bytwo BCB material dielectric layers to form a sandwiched structure, each split-ring-free resonant structure layer is formed by cutting out four 2*2 unfilled corner squares in array distribution from an aluminum film, the four unfilled corner squares penetrate the aluminum film, and one unfilled corner side of each square faces the center of the aluminum film. The high-transmission terahertz phaseshifter shifts phases of terahertz waves and has the advantages of simple structure, low loss, simple design principle and the like.

Description

technical field [0001] The present invention relates to a terahertz wave phase shifter, in particular to a metamaterial-based high-transmission terahertz phase shifter. Background technique [0002] Terahertz (THz) wave is a special spectrum between microwave / millimeter wave and infrared in the electromagnetic spectrum, and it is a relatively immature spectrum band. Electromagnetic waves in this band have unique properties. Non-metallic substances absorb less terahertz waves, so they have a strong ability to penetrate obstacles. data transfer rate. If the working frequency band of phased array radar is extended to the terahertz band, it will be beneficial to obstacle penetration detection, high-resolution imaging, miniaturization, etc., and it is expected to open up new application fields. [0003] The phase shifter is one of the most widely used basic devices in the phased array radar signal preprocessing device, and its number is proportional to the number of antennas in...

Claims

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Application Information

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IPC IPC(8): H01P1/18H01Q3/30
CPCH01P1/18H01Q3/30
Inventor 李九生汪锴宏
Owner CHINA JILIANG UNIV
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