Composite patterned substrate using low-refractive index material as medium and manufacturing method thereof

Abstract

The invention provides a composite patterned substrate using a low-refractive index material as a medium and a manufacturing method thereof. The manufacturing method comprises the following steps: S1,a sapphire substrate is provided, and a low-refractive index medium layer is deposited on the surface of the sapphire substrate, wherein the refractive index of the low-refractive index medium layeris smaller than 1.8; S2, the low-refractive index medium layer is etched to obtain a depressed structure, and the depressed structure exposes the sapphire substrate; and S3, an AlxGa1-xN buffer layergrows on the surface of the sapphire substrate exposed in the depressed structure to obtain a composite patterned substrate, wherein 0< / =X< / =1. The composite patterned substrate reduces refraction oflight inside the chip, light reflection is improved, the extraction efficiency of an LED chip is improved, the production efficiency can be improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a composite pattern substrate using low-refractive-index material as a medium and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diodes (light-emission diodes, LEDS) have the advantages of small size, low energy consumption, long life, environmental protection and durability. Blue and green GaN-based LED chips have developed rapidly in the field of display and lighting; domestic LED lighting has replaced The share of general lighting is about 30%. In order to continue to increase the penetration rate of LED in the lighting market, it is necessary to continue to improve the performance of LED in terms of brightness and light quality. At present, more than 95% of mainstream blue-green GaN-based LED epitaxial wafers use sapphire substrates as substrate materials. Sapphire substrates will still be the most important in the mainstream ...

AI Technical Summary

Problems solved by technology

With the advancement of GaN-based LED epitaxy and chip processing technology, the internal quantum efficiency of mainstream blue LEDs has increased to about 80%, and the external quantum efficiency has only reached about 60%. Due to the limitations of the physical characteristics of GaN-based LEDs, the internal quantum efficiency has increased. It is already very difficult, but there is still a lot of room for improving the external quantum efficiency of LEDs by relying on the improvement of light extraction efficiency

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