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Solar cell and its preparation method

A solar cell and battery technology, applied in the field of solar cells, can solve problems such as reducing the electrical performance of solar cells, and achieve the effects of reducing the contact area, reducing the recombination center, and improving the electrical performance

Active Publication Date: 2020-08-25
SHUNDE SYSU INST FOR SOLAR ENERGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

thereby reducing the electrical performance of the solar cell

Method used

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  • Solar cell and its preparation method
  • Solar cell and its preparation method
  • Solar cell and its preparation method

Examples

Experimental program
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Embodiment 1

[0059] Such as figure 1 As shown, this embodiment is a solar cell, including the following parts:

[0060] 1) P-type silicon chip 10: resistivity 2Ω·cm, as an absorbing layer, converts photons that meet the conditions into electrons, and the size of the P-type silicon chip is 2×2cm 2 ;

[0061] 2) n+ diffusion layer 20: also known as the emitter, the main function is to form a p-n junction with p-Si to selectively transport electrons, with a depth of about 0.5 μm, using POCl 3 As a phosphorus source, it is prepared by diffusion in a tube furnace;

[0062] 3) Silicon nitride anti-reflection film 30: deposited by PECVD, with a thickness of about 75nm;

[0063] 4) Negative electrode 40: obtained by screen printing and high-temperature sintering, used to transport carriers;

[0064] 5) Al 2 o 3 Passivation layer 50: prepared by atomic layer deposition, with a thickness of about 5nm, used to passivate p-type silicon wafers;

[0065] 6) Silicon nitride layer 60: prepared by P...

Embodiment 2

[0069] Such as figure 2 As shown, this embodiment is a solar cell. The difference from Embodiment 1 is that the high work function semiconductor material layer in this embodiment is two layers, which are divided into a first high work function semiconductor material layer 81 and a second high work function semiconductor material layer. Two high work function semiconductor material layers 82, wherein the first first high work function semiconductor material layer 81 is 9nm-V 2 o 5 , the second high work function semiconductor material layer 82 is 3nm-WO 3 . The high work function semiconductor material layer in this embodiment is denoted as 9nm-V 2 o 5 / 3nm-WO 3 , other parts are the same as in Example 1.

Embodiment 3

[0071] This embodiment is a solar cell. Compared with Embodiment 2, the difference lies in that the high work function semiconductor material layer is different. The high work function semiconductor material layer in this embodiment is 9nm-V 2 o 5 / 6nm-WO 3 , other parts are identical with embodiment 2.

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Abstract

The present invention provides a solar cell and a preparation method thereof, and relates to the technology field of solar cells. The solar cell comprises a cell matrix, a passivating film and a backelectrode. The passivating film is located between the cell matrix and the back electrode, the passivating film is provided with an opening area, and the opening area is internally provided with a high-work-function semiconductor material layer which is located between the cell matrix and the back electrode. The solar cell is employed to relieve the technical problem that there is a high recombination region in a local contact solar cell to cause decreasing of the cell performances in the prior art and achieve the technical effects on reduction of the cell recombination region and improvementof the cell electrical performances in the prior art.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] Partial contact solar cells are also called PERC solar cells, and the cells of this structure currently use Al 2 o 3 / SiNx laminated dielectric passivation film to passivate the back of the battery, due to Al 2 o 3 With a negative charge, chemical and field-effect passivation of the dangling bonds can be achieved simultaneously on the back side. However, since the laminated dielectric film is a non-conductive film, local laser grooving is required, followed by screen printing and high-temperature sintering for metallization. Although this method is the current commercial high-efficiency solar cell manufacturing technology, which can achieve a conversion efficiency of more than 21%, in the current industrialized PERC solar cells, the front side uses silicon nitride anti-reflection film to passivat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/068H01L31/0216H01L31/0224H01L31/18
CPCH01L31/02167H01L31/022441H01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 王学孟刘宗涛吴伟梁包杰
Owner SHUNDE SYSU INST FOR SOLAR ENERGY
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