Static random access memory and formation method thereof

A technology of static memory and connection structure, applied in the field of static memory structure and its formation, can solve the problems of complex formation process of static memory structure and the like

Active Publication Date: 2018-08-17
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the formation process of the static memory structure formed in the prior art is relatively complicated

Method used

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  • Static random access memory and formation method thereof
  • Static random access memory and formation method thereof
  • Static random access memory and formation method thereof

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Experimental program
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Embodiment Construction

[0039] The structure of the static memory in the prior art has many problems, for example, the formation process of the static memory is complicated, and it is difficult to produce in batches.

[0040] Combining with the static memory structure of the prior art, the reason why the formation process of the static memory structure is complicated and difficult to mass-produce is analyzed:

[0041] There are many types of static memory, mainly including: dual port static memory (Dual Port SRAM), two port static memory (Two Port SRAM) and single port static memory (Single Port SRAM). Since the dual-port static memory, the two-port static memory, and the single-port static memory are used to realize different functions, the dual-port static memory, the two-port static memory, and the single-port static memory have different circuit structures, so that the dual-port static memory Memories, two-port SRAMs, and one-port SRAMs have different device structures. Specific as Figure 1 to...

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Abstract

The present invention provides a static random access memory and a formation method thereof. The method comprises the steps of: providing a substrate consisting of a first subarea and a second subarea; forming pull-down gate structures on the substrates of the first subarea and the second subarea; forming a first transmission gate structure on the substrate of the first subarea; forming a second transmission gate structure on the substrate on the second subarea; forming a first common doping area in the substrate between the first pull-down gate structures and the first transmission gate structure; forming a second common doping area in the substrate between the pull-down gate structures and the second transmission gate structure; forming a first common connection line connected with the first common doping area; forming a second common connection line connected with the second common doping area, wherein the second common connection line is not in contact with the first common connection line; and forming a common connection structure configured to connect the second common connection line and the first common connection line. The static random access memory can simplify the process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a static memory structure and a forming method thereof. Background technique [0002] With the development of information technology, the amount of stored information has increased dramatically. The increase in the amount of stored information has promoted the rapid development of the static memory structure, and at the same time, different requirements have been put forward for the stability of the static memory structure. [0003] The basic Static Random Access Memory (SRAM) structure relies on six transistors that form two cross-coupled inverters. Each inverter includes: a pull-up transistor, a pull-down transistor and an access transistor. [0004] In order to meet the different requirements for the performance of static memory structures in the field of information technology, there are many types of static memory structures, including: single-port stat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11H01L21/8244
CPCH10B10/00H10B10/12
Inventor 王楠
Owner SEMICON MFG INT (SHANGHAI) CORP
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