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Preparation method for memory resistance and negative differential effect stabilization coexistence device at room temperature

A negative differential, room temperature technology, applied in electric solid devices, semiconductor devices, electrical components, etc., can solve problems such as restricting use value, and achieve the effects of low cost, good application prospects, and simple device structure

Active Publication Date: 2018-08-21
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

People in Ta / Nb-oxides / Au, Cu 2 S / ZnO, Ag / TiOx / F-doped-SnO 2 The coexistence of memristive effect and negative differential resistance has been found in systems such as , but it is difficult for the coexistence phenomenon discovered so far to exist stably at room temperature, which will greatly restrict its use value

Method used

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  • Preparation method for memory resistance and negative differential effect stabilization coexistence device at room temperature
  • Preparation method for memory resistance and negative differential effect stabilization coexistence device at room temperature
  • Preparation method for memory resistance and negative differential effect stabilization coexistence device at room temperature

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Embodiment 1

[0029] A method for preparing a stable coexistence device of memristor and negative differential effect at room temperature, comprising the following steps:

[0030]S1: Cleaning the substrate: Put the substrate into potassium dichromate solution, acetone, and deionized water alcohol in order to sonicate for 15 minutes respectively, clean and dry the substrate, and put it into the magnetron sputtering chamber for later use;

[0031] S2: Pre-sputtering: Mounting Cu on the magnetron sputtering target gun 2 ZnSnSe 4 Compound target material, the atomic ratio of Cu, Zn, Sn, Se is 2:1:1:4, the purity of the target material is 99%, the magnetron sputtering chamber is evacuated and then argon gas is introduced, and the substrate temperature is 200 ℃, set the distance from the target gun to the substrate to 10 cm, and pump the background vacuum of the sputtering chamber to less than 1x10 -3 Pa, the argon gas with a purity of 99.999% is introduced as the working gas, the baffle covers...

Embodiment 2

[0039] A method for preparing a stable coexistence device of memristor and negative differential effect at room temperature, comprising the following steps:

[0040] S1: Cleaning the substrate: Put the substrate into potassium dichromate solution, acetone, and deionized water alcohol in order to sonicate for 15 minutes respectively, clean and dry the substrate, and put it into the magnetron sputtering chamber for later use;

[0041] S2: Pre-sputtering: Mounting Cu on the magnetron sputtering target gun 2 ZnSnSe 4 Compound target material, the atomic ratio of Cu, Zn, Sn, Se is 2:1:1:4, the purity of the target material is 99%, the magnetron sputtering chamber is evacuated and then argon gas is introduced, and the substrate temperature is 200 ℃, set the distance from the target gun to the substrate to 10 cm, and pump the background vacuum of the sputtering chamber to less than 1x10 -3 Pa, the argon gas with a purity of 99.999% is introduced as the working gas, the baffle cover...

Embodiment 3

[0047] A method for preparing a stable coexistence device of memristor and negative differential effect at room temperature, comprising the following steps:

[0048] S1: Cleaning the substrate: Put the substrate into potassium dichromate solution, acetone, and deionized water alcohol in order to sonicate for 15 minutes respectively, clean and dry the substrate, and put it into the magnetron sputtering chamber for later use;

[0049] S2: Pre-sputtering: Mounting Cu on the magnetron sputtering target gun 2 ZnSnSe 4 Compound target material, the atomic ratio of Cu, Zn, Sn, Se is 2:1:1:4, the purity of the target material is 99%, the magnetron sputtering chamber is evacuated and then argon gas is introduced, and the substrate temperature is 300 ℃, set the distance from the target gun to the substrate as 12 cm, and pump the background vacuum of the sputtering chamber to less than 1x10 -3 Pa, introduce argon with a purity of 99.999% as the working gas, cover the substrate with the...

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Abstract

The invention discloses a preparation method for a memory resistance and negative differential effect stabilization coexistence device at the room temperature. The method comprises the following stepsthat S1, a substrate is cleaned, wherein the substrate is cleaned, blow-dried and then placed into a magnetron sputtering chamber for use; S2, pre-sputtering is conducted, wherein a Cu2ZnSnSe4 compound target material is arranged on a magnetron sputtering target gun, and pollutants on the surface of the Cu2ZnSnSe4 compound target material are removed through pre-sputtering; S3, Cu2ZnSnSe4 thin film is sputtered and deposited, wherein after the treatment in the second step, a sputtering condition is kept, sputtering and deposition are conducted on the substrate, the sputtering time is 20 min,and the Cu2ZnSnSe4 thin film is obtained; S4, an upper electrode is prepared, wherein the upper electrode is deposited on the surface of the deposited Cu2ZnSnSe4 thin film, and the required device isobtained. The preparation method is easy to operate, good in repeatability, high in deposition speed, low in preparation cost, high in efficiency, suitable for industrial large-scale production and worthy of popularization in the industry, and the thickness of the thin film is even and controllable.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film devices, and in particular relates to a method for preparing a stable coexistence device of memristor and negative differential effect at room temperature. Background technique [0002] Today, with the rapid development of information technology, smart phones with increasingly powerful performance and computers with faster and faster computing speeds have changed our way of life. Our electronic devices receive and process a large amount of information every day. The IDC research report pointed out that the total world data production in 2011 exceeded 1.8ZB (1ZB=10 21 B), as of 2020, the total amount of global data will increase by 50 times at a compound annual growth rate of 55%. It has become extremely important for mass information storage and processing. However, the existing storage devices are limited by the technology of storage cells and CMOS circuits, and the development speed canno...

Claims

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Application Information

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IPC IPC(8): H01L27/108
CPCH10B12/01H10B12/00
Inventor 郭涛郑平平孙柏余洲刘连赵勇
Owner SOUTHWEST JIAOTONG UNIV
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