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A method for preparing a memristor sensitive to environmental factors

A technology of environmental factors and memristors, applied in vacuum evaporation plating, coating, sputtering plating, etc., can solve the problems of size physical theory and preparation technology limitations, and achieve low cost, good application prospects, and simple steps Effect

Active Publication Date: 2020-04-07
SOUTHWEST JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for storage devices, the current traditional semiconductor storage devices based on charge storage encounter severe dual limitations of physical theory and manufacturing technology due to the reduction in size, so they cannot meet the needs of the rapid development of today's information technology

Method used

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  • A method for preparing a memristor sensitive to environmental factors
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  • A method for preparing a memristor sensitive to environmental factors

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

[0026] A method for preparing a memristor sensitive to environmental factors provided by the present invention comprises the following steps:

[0027] S1: Clean the substrate: take the flat glass covered with FTO film as the substrate, place the substrate in deionized water, alcohol, acetone, alcohol, and deionized water in sequence, ultrasonically for 10-20 minutes respectively, and then dry it with nitrogen Put it into the magnetron sputtering chamber and set it aside;

[0028] S2: Cu deposition by sputtering 2 ZnSnSe 4 (CZTSe) Thin Films: Mounting Cu on a Magnetron Sputtering Target Gun 2 ZnSnSe 4 Compound target material, the atomic ratio of Cu, Zn, Sn, Se is 2:1:1:4, the base distance of the target is set to 8-12cm, and the background vacuum of the magnetron sputtering chamber is pumped to 3.6×10 -4 Pa, when high-purity argon gas with a pur...

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Abstract

The invention discloses a method for preparing a memristor sensitive to environmental factors, which specifically includes the following steps: S1: cleaning the substrate; S2: depositing Cu by sputtering 2 ZnSnSe 4 Thin film: Cu obtained by controlled sputtering 2 ZnSnSe 4 thin film; S3: sputter-deposited BiFeO 3 Thin film: after step S2 treatment, on Cu 2 ZnSnSe 4 Magnetron sputtering on thin films to obtain BiFeO 3 thin film; S4: preparation of the upper electrode: the deposited BiFeO 3 Electrodes are deposited on the surface of the film to obtain a memristor sensitive to environmental factors. The preparation method of the memristor sensitive to environmental factors provided by the present invention has simple steps, strong operability, and is suitable for industrial production; the prepared memristive device exhibits excellent memristive performance, and the device structure is simple and repeatable. It has good performance and low cost, and has good application prospects in the fields of new types of memory, future exploration of outer space and other electronic devices.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film devices, and in particular relates to a method for preparing a memristor sensitive to environmental factors. Background technique [0002] With the rapid development of information digitization, computer technology, the Internet and portable electronic products, electronic devices play an increasingly important role in our daily life. We process and receive massive amounts of information through electronic devices every day. Therefore, people put forward higher requirements for the performance of electronic devices, such as fast speed, high storage capacity, long service life, small volume and so on. However, for storage devices, the current traditional semiconductor storage devices based on charge storage encounter severe physical theory and manufacturing technology dual limitations due to the reduction in size, so they cannot meet the needs of the rapid development of today's information t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00C23C14/04C23C14/06C23C14/08C23C14/18C23C14/35
CPCC23C14/042C23C14/0623C23C14/08C23C14/185C23C14/35H10N70/8825H10N70/8836H10N70/026
Inventor 孙柏李小霞付国强陈元正李冰赵勇
Owner SOUTHWEST JIAOTONG UNIV
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