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Silicon oxide-based memristor based on solution method as well as preparation method and application of silicon oxide-based memristor

A silicon oxide-based, memristor technology, applied in electrical components and other directions, can solve the problems of poor bonding between electrodes, insufficient compactness, holes, etc., and achieve the effects of low equipment requirements, good adhesion, and simple preparation process.

Active Publication Date: 2021-01-12
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the solution method usually has certain deficiencies in the quality control of the dielectric layer, such as the SiO prepared by the conventional sol-gel method. x The layer is usually not dense enough, poorly bonded to the electrode, and even cracks, holes, etc.

Method used

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  • Silicon oxide-based memristor based on solution method as well as preparation method and application of silicon oxide-based memristor
  • Silicon oxide-based memristor based on solution method as well as preparation method and application of silicon oxide-based memristor
  • Silicon oxide-based memristor based on solution method as well as preparation method and application of silicon oxide-based memristor

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The preparation method of the silicon oxide-based memristor in this embodiment is as follows: firstly, the lower electrode is prepared on the glass substrate; then the lower electrode is solidified and transformed by PHPS to prepare a silicon oxide film as the intermediate dielectric layer; finally, the upper electrode is prepared on the silicon oxide . details as follows:

[0054] 1) First, wash the surface of the glass sheet with detergent to remove stains; then use ethanol, acetone, and deionized water to ultrasonically clean for 30 minutes, and finally dry the surface with nitrogen to obtain a substrate with a clean surface. Au lower electrode layer was prepared on the substrate with a thickness of 50nm.

[0055] 2) Dilute perhydropolysilazane (PHPS) to 3% (mass fraction) with dibutyl ether, add 0.2% N,N-dimethylacetamide as a catalyst, oscillate and mix evenly through a high-speed oscillating disperser .

[0056] 3) After passing the solution prepared in step 2)...

Embodiment 2

[0062] Adopt the preparation method of memristor in embodiment 1, but in SiO x During the preparation of the dielectric layer, damp heat is used for curing, as follows: the lower electrode / glass sheet coated with the PHPS film obtained in step 3) is placed in a constant temperature and humidity box at a temperature of 180°C and a humidity of 50%, and the holding time is 1.5h. That is, SiO x Dielectric layer, the resulting memristor structure is Ag / SiO x / Au / glass.

[0063] According to XRD analysis, it can be seen that the prepared SiO x The dielectric layer has a random structure; ellipsometer tests SiO x The thickness of the layer is 34.6nm; the oxygen-silicon ratio x=1.58 of silicon oxide is obtained by XPS characterization, and there is 5.21wt% nitrogen atom doping; AFM characterizes SiO x surface morphology from image 3It can be seen in SiO x The surface is smooth and uniform, without cracks and voids, and the roughness Ra is 0.372nm.

[0064] The current-voltage ...

Embodiment 3

[0066] Adopt the preparation method of memristor in embodiment 1, but in SiO x In the preparation of the dielectric layer, room temperature ammonia catalytic curing method is adopted, which is as follows: the container with 10% ammonia water is placed in a closed environment to form an ammonia atmosphere, and the bottom electrode / Place the glass sheet in this airtight ammonia gas atmosphere and keep it at 25°C for 24h to obtain SiO x Dielectric layer, the resulting memristor structure is Ag / SiO x / Au / glass.

[0067] According to XRD analysis, it can be seen that the prepared SiO x The dielectric layer has a random structure; ellipsometer tests SiO x The thickness of the layer is 36.3nm; the oxygen-silicon ratio of silicon oxide x=1.45 is obtained by XPS characterization, and there is 6.25wt% nitrogen atom doping; AFM characterizes SiO x surface morphology from Figure 4 It can be seen in SiO x The surface is smooth and uniform, without cracks and voids, and the roughnes...

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Abstract

The invention discloses a silicon oxide-based memristor based on a solution method as well as a preparation method and application of the silicon oxide-based memristor. The method comprises the following steps: 1) preparing a lower electrode on a substrate, or providing or directly preparing the lower electrode; 2) preparing a SiOx dielectric layer on the lower electrode by adopting the solution method and taking PHPS as a raw material to obtain a SiOx dielectric layer / lower electrode or a SiOx dielectric layer / lower electrode / substrate; and 3) after the step 2) is completed, covering the SiOxdielectric layer with a mask plate, and preparing an upper electrode to obtain the silicon oxide-based memristor. The SiOx dielectric layer in the memristor is prepared by adopting the PHPS solutionmethod, the prepared film layer is compact and uniform, the adhesiveness of the SiOx dielectric layer and an electrode is good, and cracks, holes and the like are avoided.

Description

technical field [0001] The invention belongs to the field of memristor preparation, in particular to a silicon oxide-based memristor based on a solution method, a preparation method and application thereof. Background technique [0002] In 1971, Professor Cai Shaotang (IEEE Transactions on Circuit Theory, 1971,18(5):507-519) proposed for the first time from the perspective of circuit theory that besides resistors, capacitors, and inductors, there is a fourth passive electronic device for characterization The relationship between charge and magnetic flux, and named it memristor (memristor). He predicted that the resistance of memristors would change reversibly in response to external electrical stimuli, thereby recording the charge and magnetic flux flowing through them. This speculation has attracted great attention of scientists, and researchers have carried out a lot of work around the mechanism, preparation and application of memristors. [0003] As a new type of memory...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/8833H10N70/011
Inventor 张宗波李鹏飞徐彩虹王丹
Owner INST OF CHEM CHINESE ACAD OF SCI
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