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Graphene supported ag-au@fe 3 o 4 Preparation method and application of electric sensing material

A graphene and graphene solution technology, applied in the field of electrochemical analysis, can solve the problems of affecting the results, large errors, affecting the detection of arsenic elements, etc., and achieve the effect of accurate detection and enhanced adsorption.

Inactive Publication Date: 2019-10-25
UNIV OF JINAN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Aiming at the deficiencies of the prior art, the present invention provides a graphene-loaded Ag-Au@Fe3O4 for the preparation and application of electrical sensing materials, which solves the problem that the traditional arsenic detection method uses arsenic solution to drip onto the colorimetric card. surface, and then determine the concentration of arsenic by color comparison. Since there will be other ions in the solution, other ions will affect the detection of arsenic, resulting in inaccurate detection results and large errors, which will affect the experimental results. question

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  • Graphene supported ag-au@fe  <sub>3</sub> o  <sub>4</sub> Preparation method and application of electric sensing material

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Embodiment Construction

[0053]The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0054] like Figure 1-9 As shown, the present invention provides a technical solution: a graphene-loaded Ag-Au@Fe3O4 is applied to the preparation and application of electrical sensing materials, including the following steps:

[0055] Step 1: Preparation of Graphene

[0056] A1. Add 0.5g of graphite powder, 3.0gKMnO4, 63ml of concentrated sulfuric acid and 7ml of H3PO4 into a 150ml single-necked round bottom flask, and put the resulting solution in a water ba...

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Abstract

The invention discloses a preparation method and application of a graphene-loaded Ag-Au@Fe3O4 electrical sensing material, comprising the following steps: step 1, preparation of graphene; step 2, preparation of GO-Ag; step 3, GO-Ag Preparation of Ag / Au; Step 4, preparation of GO-Ag / Au-Fe3O4. The graphene-loaded Ag-Au@Fe3O4 is applied to the preparation and application of electrical sensing materials. By preparing graphene, GO-Ag, GO-Ag / Au and GO-Ag / Au-Fe3O4, the graphene-loaded Ag-Au @Fe3O4, so that the material can quantitatively detect the concentration of arsenic in the range of 0.1ppb‑20ppb and linearity above 0.998, and qualitatively detect arsenic in a larger range, and other metal ions have no effect on its detection. Since the catalyst is loaded with Fe3O4 nanoparticles, the adsorption of arsenic on the catalyst is enhanced, thus enabling the detection of trace arsenic compounds.

Description

technical field [0001] The invention relates to the technical field of electrochemical analysis, in particular to the preparation and application of a graphene-loaded Ag-Au@Fe3O4 applied to electrical sensing materials. Background technique [0002] Arsenic, commonly known as arsenic, is a metalloid element. It is located in the 4th period and group VA of the periodic table of chemical elements. Its atomic number is 33 and its element symbol is As. exist in the form of a body. Arsenic exists widely in nature, and hundreds of arsenic minerals have been discovered. Arsenic and its compounds are used in pesticides, herbicides, insecticides and many kinds of alloys. Its compound, arsenic trioxide, is known as arsenic and is a highly toxic substance. [0003] At present, metal arsenic is mainly used as an alloy material in copper and lead alloys. In addition, arsenic is also used as a doping material in some semiconductor materials, such as N-type semiconductor materials, etc...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/89G01N27/26B01J20/20B01J20/30
CPCB01J20/06B01J20/20B01J23/8906G01N27/26
Inventor 赵振路马孔硕王建荣张梓微蒋彤侯树平杨萍
Owner UNIV OF JINAN