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Ink for preparing transistor dielectric layer, and ink film layer and preparation method and application thereof

A technology of transistors and dielectric layers, applied in the field of organic electronic device materials, can solve problems such as solution waste, achieve the effects of reducing consumption and wide practicability

Inactive Publication Date: 2018-08-24
SHANGHAI MI FANG ELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inks currently configured with PMSQ are spin-coated on the required substrate, and the spin-coating method will cause 98% of the solution to be wasted

Method used

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  • Ink for preparing transistor dielectric layer, and ink film layer and preparation method and application thereof
  • Ink for preparing transistor dielectric layer, and ink film layer and preparation method and application thereof
  • Ink for preparing transistor dielectric layer, and ink film layer and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] This example is used to illustrate the ink of the present disclosure and its preparation method.

[0052] In 0.75mL of propylene glycol monomethyl ether acetate (PGMEA) solution, add 0.5g of polymethylsilsesquioxane (PMSQ) solution with a mass ratio of 50%, and then add 50mg of polystyrene and 0.5mg of polyethylene Diol octyl phenyl ether was stirred magnetically for 1 hour, then sonicated for 10 minutes, and then filtered through a 0.22 μm organic filter head to obtain the ink of this example.

[0053] In the prepared ink, relative to 0.75mL propylene glycol monomethyl ether acetate, the content of polymethylsilsesquioxane is 0.25g, the content of polymer additive (polystyrene poly) is 50mg, surfactant The content of (polyethylene glycol octylphenyl ether) was 0.5 mg.

Embodiment 2-12

[0055] The ink composition and content are shown in Table 1, respectively

[0056] The inks of Examples 2-12 were prepared according to the method of Example 1.

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Abstract

The present disclosure relates to ink for preparing a transistor dielectric layer, an ink film layer and a preparation method and application thereof, and the ink comprises polymethylsilsesquioxane, apolymer additive, a surfactant and an organic solvent. The ink provided by the invention can be used to prepare a dielectric layer of an organic thin film transistor by an inkjet printing method, compared with a conventional spin coating preparation method, ink consumption is greatly reduced, ink can be jetted according to demand, and a printed film can be patterned.

Description

technical field [0001] The present disclosure relates to the field of organic electronic device materials, in particular, to an ink for preparing a dielectric layer of a transistor, an ink film layer, a preparation method and application thereof. Background technique [0002] Organic field-effect transistors (Organic Feld-Effect Transistors, OFET) are transistor devices that use organic semiconductor materials as the active layer. Compared with traditional inorganic semiconductor devices, it has been widely studied because it can be applied to the production of large-area flexible devices, such as organic light-emitting devices, organic photodetectors, organic solar cells, pressure sensors, organic storage devices, flexible flat panel Electronic paper and many other fields have potential and broad application prospects. [0003] In the prior art, a glass substrate with an ITO layer on the surface is used to manufacture an OFET with a PMSQ gate dielectric. Specifically: the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/36C09D11/108C09D11/107C09D11/102
CPCC09D11/102C09D11/107C09D11/108C09D11/36
Inventor 李胜夏张文显魏勤蓝河
Owner SHANGHAI MI FANG ELECTRONICS LTD