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Light emitting diode (LED) chip structure and manufacturing method thereof

A technology of light emitting diode and chip structure, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low light extraction and low luminous efficiency, and achieve the effects of enhanced adhesion, enhanced incident light scattering, and increased interface surface area.

Active Publication Date: 2018-08-24
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a light-emitting diode chip structure and its manufacturing method, which are used to solve the problem of low light extraction from the outside of the light-emitting diode chip in the prior art, resulting in reduced luminous efficiency.

Method used

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  • Light emitting diode (LED) chip structure and manufacturing method thereof
  • Light emitting diode (LED) chip structure and manufacturing method thereof
  • Light emitting diode (LED) chip structure and manufacturing method thereof

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Embodiment 2

[0083] Such as Figure 8 and Figure 13 As shown, this embodiment provides a light emitting diode chip structure, the basic structure of which is the same as that of Embodiment 1, wherein the difference from Embodiment 1 lies in that the protrusion structure is a conical protrusion structure 1082 . The height of the raised structures is not less than 100 nm, the diameter or side length of the raised structures is not greater than 50 μm, and the distance between adjacent raised structures is not greater than 20 μm. In this embodiment, the particle diameter of the conical protrusion structure 1082 is 26 μm, the height is 500 nm, and the distance between two adjacent conical protrusion structures 1082 is 3 μm, so that the second current blocking layer 108 can be The light emitting area is increased by about 30%, and it is characterized in that it is easy to prepare and can effectively reduce the process cost.

Embodiment 3

[0085] Such as Figure 9 and Figure 13 As shown, this embodiment provides a light emitting diode chip structure, the basic structure of which is the same as that of Embodiment 1, wherein the difference from Embodiment 1 lies in that the raised structure is a frustum-shaped raised structure 1083 . The height of the raised structures is not less than 100 nm, the diameter or side length of the raised structures is not greater than 50 μm, and the distance between adjacent raised structures is not greater than 20 μm. In this embodiment, the particle diameter of the truncated conical protruding structures 1083 is 26 μm, the height is 500 nm, and the distance between two adjacent truncated conical protruding structures 1083 is 3 μm, which can make the second current blocking layer 108 The light output area is increased by about 20%, which is characterized by the high mechanical stability of the truncated conical convex structure 1083, which can effectively improve the stability of ...

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Abstract

The invention provides an LED chip structure and a manufacturing method thereof. The LED chip structure comprises a substrate, an epitaxial structure, a mesa structure, a first current barrier layer,a current extension layer, a second current barrier layer, a first P electrode, a distributed Bragg reflection layer, a second P electrode and an N electrode. The first current barrier layer is formedin part of the surface of the epitaxial structure, the current extension layer wraps the first current barrier layer, the second current barrier layer is formed in the surface of the current extension layer and includes a patterned rough surface, and the distributed Bragg reflection layer wraps the first P electrode, the surface of the second current barrier layer and the sidewall of the epitaxial structure. Via the current barrier layer with the patterned rough structure, the interface surface area of the current extension layer and the distributed Bragg reflection layer can be increased greatly, scattering of incident light of the distributed Bragg reflection layer is enhanced, and the chip brightness is improved. The adhesion of the current barrier layer and the distributed Bragg reflection layer can be enhanced, and the structural reliability is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, in particular to a light emitting diode chip structure and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes LEDs are usually made of semiconductors such as GaN (gallium nitride), GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/14H01L33/46
CPCH01L33/145H01L33/22H01L33/46H01L33/382H01L33/44H01L33/42H01L33/20H01L33/007H01L33/005H01L33/10H01L2933/0016
Inventor 曾江斌何安和洪灵愿彭康伟林素慧张家宏
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD