Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SCR type ESD protection device for PMOS triggering and internal voltage clamping

A technology of internal voltage and devices, which is applied in the field of SCR ESD protection devices, can solve the problems of small working window, high trigger voltage and low sustain voltage, and achieve the effects of avoiding latch-up effect, reducing trigger voltage and increasing sustain voltage

Active Publication Date: 2018-09-04
NANJING UNIV OF POSTS & TELECOMM
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are some fatal problems in the SCR structure: the trigger voltage of the SCR structure is too high, and the maintenance voltage of the SCR structure device is very low due to the positive feedback of NPN and PNP.
This leads to a very small working window of high-voltage ESD devices, and most of the current high-voltage ESD protection devices are difficult to meet this requirement, so it is very important to explore more ESD protection devices and protection structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SCR type ESD protection device for PMOS triggering and internal voltage clamping
  • SCR type ESD protection device for PMOS triggering and internal voltage clamping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0015] like figure 2 As shown, the present invention designs a SCR type ESD protection device that triggers PMOS and clamps the internal voltage. In practical applications, it specifically includes P substrate 10 (P-sub), N well 11 (NW), P well 12 ( PW), the first N+ implantation region 13, the first P+ implantation region 14, the second P+ implantation region 15, the third P+ implantation region 16, the second N+ implantation region 17, the third N+ implantation region 18, the fourth P+ implantation region 19. The first field oxygen isolation region 20, the second field oxygen isolation region 21, the third field oxygen isolation region 22, the fourth field oxygen isolation region 23, the fifth field oxygen isolation region 24, the first polysilicon gate 25, The first thin gate oxide layer 26, the second polysilicon g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an SCR type ESD protection device for PMOS triggering and internal voltage clamping. For the SCR structure, a PMOS structure is added in an N well, and a PMOS drain terminal is connected with a P well. Under the forward ESD pulse, a PMOS is broken down earlier than a reverse PN junction, and the current is transmitted to the P well through a drain terminal P+, the P-well potential is raised, a parasitic NPN transistor turns on faster, and the device trigger voltage is reduced; in addition, the new parasitic transistor for clamping the internal voltage is added into thedevice, the positive feedback mechanism is suppressed, and the sustain voltage of the device is increased.

Description

technical field [0001] The invention relates to an SCR type ESD protection device which is triggered by a PMOS and clamps an internal voltage, and belongs to the technical field of electrostatic discharge of integrated circuits. Background technique [0002] Electrostatic discharge (ESD) refers to when two objects with different charges approach or touch each other, the medium between the two is broken down, forming a transient charge transfer. Due to the characteristics of low power, short action time and low energy, ESD events in daily life generally do not cause harm to the human body. However, in integrated circuits, many ESD events that are not perceived by the human body are enough to cause damage to some electronic components. During the process of manufacturing, packaging, testing, transportation and use, the chip may face the impact of ESD. If there is no ESD protection module added to the chip, the chip will be easily damaged. With the continuous development of i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0277
Inventor 陈珊珊成建兵吴宇芳王勃
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com