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NAND FLASH data source block recovery method and solid state disk

A recycling method and technology of solid-state hard disks, which are used in electrical digital data processing, memory address/allocation/relocation, instruments, etc., can solve the problems of low data comparison efficiency and slow SSD response speed, and improve data comparison efficiency. , the effect of fast response

Active Publication Date: 2018-09-07
YEESTOR MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a NAND FLASH data source block recovery method and a solid-state hard disk for the above-mentioned low efficiency of data comparison in the prior art and the slow response speed of SSD.

Method used

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  • NAND FLASH data source block recovery method and solid state disk
  • NAND FLASH data source block recovery method and solid state disk
  • NAND FLASH data source block recovery method and solid state disk

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Embodiment Construction

[0040] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings.

[0041] figure 1 It is a schematic flowchart of a method for recovering data source blocks of NAND FLASH according to the present invention. The NANDFLASH data source block recycling method includes the following steps:

[0042] Step 101: Divide the storage space of the memory into a plurality of storage block sets.

[0043] Specifically, dividing the storage space of the memory into a plurality of storage block sets includes: in a controller supporting multi-channel and multiple NAND FLASHs, forming a storage block set of NAND FLASH executed in parallel.

[0044] The storage block set includes at least two storage blocks, and each storage block includes at least one storage page. The storage block includes a pluralit...

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Abstract

The invention relates to an NAND FLASH data source block recovery method and a solid state disk (SSD). The method comprises the steps that in a controller supporting multiple channels and multiple NAND FLASHes, the NAND FLASHes executed concurrently are made into a storage block set; the valid data amount in each storage block set is acquired; the valid data amounts in all the storage block sets are compared; the storage block set with a small valid data amount is selected to serve as a data source block, and if the valid data amounts in the storage block sets are equal, the storage block setwith low dispersion is selected to serve as the data source block; and the selected data source block is used to fill up a data target block. Through the method, data comparison efficiency can be improved, the response speed of the SSD is higher, the data source block with optimal recovery efficiency can be selected, and therefore the SSD speed is brought into full play.

Description

technical field [0001] The invention relates to the field of data management of solid-state hard disks, and more specifically, relates to a method for recovering data source blocks of NAND FLASH and solid-state hard disks. Background technique [0002] SSD NAND FLASH is restricted by non-rewritable conditions, so when all data is full, data comparison and migration must be done to clear new space for users to write data, and the current existing technology is garbage recovery (GC). When garbage collection (GC) is doing data comparison and looking for valid data, it uses the physical pair logical mapping table (P2L) and the logical pair physical mapping table (L2P) for comparison. If the compared data is equal , it is valid data, that is, data that needs to be moved, and if not, it is invalid data and does not need to be moved. [0003] The existing method is to find a data block with the least valid data, read the physical-to-logic mapping table (P2L) of the data block, co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
CPCG06F12/0253
Inventor 吕绍宏林昱纬
Owner YEESTOR MICROELECTRONICS CO LTD
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