Unlock instant, AI-driven research and patent intelligence for your innovation.

a bi 2 o 2 SE-based thermoelectric material and its preparation method and thermoelectric device

A technology of thermoelectric material and discharge plasma, which is applied in the field of materials and can solve problems such as the need for improvement of thermoelectric materials

Inactive Publication Date: 2021-07-23
TSINGHUA UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Therefore, the current thermoelectric materials still need to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a bi  <sub>2</sub> o  <sub>2</sub> SE-based thermoelectric material and its preparation method and thermoelectric device
  • a bi  <sub>2</sub> o  <sub>2</sub> SE-based thermoelectric material and its preparation method and thermoelectric device
  • a bi  <sub>2</sub> o  <sub>2</sub> SE-based thermoelectric material and its preparation method and thermoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] According to Bi 1.975 Sb 0.025 o 2 The ratio of Se, weigh Bi 2 o 3 , Bi, Se and Sb powders, mixed by ball milling at a speed of 350r / min for 4-6 hours, then vacuum-sealed and then calcined, sintered in air at 500°C for 12 hours to complete the phase formation stage of the material phase. Then crushed, mixed, and sintered in SPS discharge plasma sintering furnace at 625°C, the sintering pressure was 50MPa, the heating rate was 70°C / min, and the temperature was kept for 5min to obtain Bi 2 o 2Se-based thermoelectric materials. The X-ray diffraction (XRD) and scanning electron microscope (SEM) characterization results of the obtained thermoelectric materials refer to figure 2 and image 3 , ZT value is 0.41.

Embodiment 2

[0061] According to Bi 1.95 Sb 0.05 o 2 The ratio of Se, weigh Bi 2 o 3 , Bi, Se and Sb powders, mixed by ball milling at a speed of 350r / min for 4-6 hours, then vacuum-sealed and then calcined, sintered in air at 500°C for 12 hours to complete the phase formation stage of the material phase. Then crush, mix, and sinter in SPS discharge plasma sintering furnace under the condition of 625°C, the sintering pressure is 50MPa, the heating rate is 70°C / min, and the temperature is kept for 5min to obtain Bi 2 o 2 Se-based thermoelectric materials. The XRD and SEM characterization results of the obtained thermoelectric materials refer to Figure 4 and Figure 5 , ZT value is 0.33.

Embodiment 3

[0063] According to Bi 1.925 Sb 0.075 o 2 The ratio of Se, weigh Bi 2 o 3 , Bi, Se and Sb powders, mixed by ball milling at a speed of 350r / min for 4-6 hours, then vacuum-sealed and then calcined, and sintered in air at 500°C for 12 hours to complete the phase formation stage of the material phase. Then crushed, mixed, and sintered in SPS discharge plasma sintering furnace at 625°C, the sintering pressure was 50MPa, the heating rate was 70°C / min, and the temperature was kept for 5min to obtain Bi 2 o 2 Se-based thermoelectric materials. The XRD and SEM characterization results of the obtained thermoelectric materials refer to Figure 6 and Figure 7 , ZT value is 0.32.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a thermoelectric material, a preparation method thereof and a thermoelectric device. Wherein, the thermoelectric material has the following chemical composition: Bi 2‑x Sb x o 2 Se, where 0<x≤0.15. The inventors have found that the thermoelectric material with the above chemical composition has higher electrical conductivity, higher thermoelectric figure of merit (ZT value), better thermoelectric performance, higher work efficiency, better chemical stability at high temperature, and in use It is not easily damaged by oxidation during the process, has better performance, is environmentally friendly, and has low cost.

Description

technical field [0001] The invention relates to the field of materials, in particular, to a thermoelectric material, a preparation method thereof, and a thermoelectric device. Background technique [0002] With the depletion of fossil fuels coal, oil and natural gas, the development of new clean energy sources and the improvement of existing energy technologies are imminent. More than 60% of the energy in human industrial activities is dissipated in the form of waste heat, and new energy technologies that can recycle waste heat have received extensive attention. Solid thermoelectric (thermoelectric) materials have attracted more and more attention due to their ability to utilize the internal microscopic carrier transport to realize direct mutual conversion between thermal energy and electrical energy. Thermoelectric devices made of thermoelectric materials have the advantages of small size, simple structure, no noise, no moving parts, no pollution, long life, high stability...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/626C01B19/00
CPCC01B19/002C04B35/453C04B35/622C04B35/62675C04B2235/32C04B2235/3294C04B2235/656C04B2235/6562C04B2235/6567C04B2235/666
Inventor 林元华谭星李悦明南策文
Owner TSINGHUA UNIV