Patterned substrate, epitaxial wafer and manufacturing method thereof
A technology for patterning substrates and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of poor uniformity and consistency of light-emitting wavelengths of epitaxial wafers, and achieves reduction of stress, reduction of thickness differences, and improvement of uniformity and stability. The effect of consistency
Active Publication Date: 2019-12-31
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0006] In order to solve the problem of poor uniformity and uniformity of the emission wavelength of the epitaxial wafer made of the existing patterned substrate, the embodiment of the present invention provides a patterned substrate, an epitaxial wafer and a manufacturing method thereof
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[0030] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
[0031] figure 1 Is a schematic structural diagram of a patterned substrate provided by an embodiment of the present invention, figure 2 Is a schematic cross-sectional view of a patterned substrate provided by an embodiment of the present invention, combined with figure 1 with figure 2 The pattern 11 of the patterned substrate 10 includes a plurality of cone-shaped protrusions arranged in an array.
[0032] Conical protrusions refer to bodies of revolution whose cross section gradually decreases in the height direction, including but not limited to conical protrusions.
[0033] The plurality of tapered protrusions includes a plurality of first tapered protrusions 111 located in the middle of the patterned substrate 10 and a plurality of second ta...
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The invention discloses a patterned substrate, an epitaxial wafer, a manufacturing method of the patterned substrate and a manufacturing method of the epitaxial wafer, which belong to the technical field of semiconductors. A pattern of the patterned substrate comprises a plurality of tapered protrusions distributed in an array, wherein the plurality of tapered protrusions comprise a plurality of first tapered protrusions located in the middle portion of the patterned substrate and a plurality of second tapered protrusions located on the edge of the patterned substrate, the plurality of secondtapered protrusions surrounds the plurality of first tapered protrusions, and shapes of the first tapered protrusions and the second tapered protrusions are different. Since the shapes of the first tapered protrusions and the second tapered protrusions are different, the stress on the edge of the epitaxial wafer can be reduced when the epitaxial wafer is grown, and the warpage can be reduced, so that the thickness of the epitaxial wafer is more uniform, and the thickness difference between the edge and the middle portion of the epitaxial wafer is reduced; meanwhile, experimental comparison shows that the incorporation of In during the growth of a quantum well is facilitated, thereby improving the uniformity and consistency of light emitting wavelength of the epitaxial wafer.
Description
Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a patterned substrate, an epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, abbreviation: LED), as a highly influential new product in the optoelectronic industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting and display screens. , Signal lights, backlight, toys and other fields. The core structure of the LED is an epitaxial wafer, and the production of the epitaxial wafer has a greater impact on the photoelectric characteristics of the LED. [0003] The epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. The patterned substrate is a commonly used substrate. Compared with the traditional flat substrate, the dislocation density of the epitaxial layer grown on the patterned subs...
Claims
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IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/005H01L33/22
Inventor 王群郭炳磊葛永晖董彬忠李鹏王江波
Owner HC SEMITEK ZHEJIANG CO LTD