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Magnetoresistive random access memory cell and fabricating the same

A magnetoresistive random access and memory unit technology, applied in static memory, digital memory information, magnetic field controlled resistors, etc., can solve problems such as low performance of MTJ units

Pending Publication Date: 2018-09-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, various damages to the MTJ cell during the etching process of fabrication, including damage to the free ferromagnetic layer and the tunneling layer, will result in poor performance of the MTJ cell

Method used

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  • Magnetoresistive random access memory cell and fabricating the same
  • Magnetoresistive random access memory cell and fabricating the same
  • Magnetoresistive random access memory cell and fabricating the same

Examples

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Embodiment Construction

[0027] It should be understood that the following disclosure provides many different embodiments, or examples, for implementing different elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. In addition, in the following description, performing a first process before a second process may include embodiments where the second process is performed immediately after the first process, and may also include embodiments where additional processes may be performed between the first and second processes Examples implemented between. Various components may be arbitrarily depicted in different specifications for simplicity and clarity. Furthermore, in the description below, forming a first component over or on a second component may include embodiments in which the first and second components are formed in direct contact, and may also i...

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Abstract

The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a tunneling layer disposed over the pinned layer, a free layer disposed over the tunneling layer and a capping layer disposed over the free layer. The capping layer includes metal-oxide and metal-nitride materials. The invention provides a magnetic resistance random access memory unit and a method for manufacturing the same.

Description

[0001] This application is a divisional application, the application number of its parent application is 201310294412.6, the application date is July 12, 2013, and the title of the invention is "magnetoresistive random access memory unit and its manufacturing method". technical field [0002] The present invention relates to a magnetoresistive random access memory cell and a method of manufacturing the same. Background technique [0003] Among integrated circuit (IC) devices, magnetoresistive random access memory (MRAM) is an emerging technology for next-generation embedded memory devices. An MRAM is a memory device that includes an array of MRAM cells, each of which stores a bit of data using a resistance value rather than an electrical charge. Each MRAM cell includes a magnetic tunnel junction ("MTJ") cell whose resistance can be adjusted to represent a logic "0" or a logic "1." The MTJ cell includes an antiferromagnetic ("AFM") pinned layer, a ferromagnetic pinned, or pi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08H01L43/12H10N50/10H10N50/01H10N50/80
CPCG11C11/161H10N50/10H10N50/01H10N50/85H10N50/80
Inventor 吴国铭郑凯文蔡正原蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD