Semiconductor component fuse structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor component fuse structure. In the semiconductor component fuse structure, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer and a passivation layer are sequentially arranged on a silicon substrate; a fuse hole passes through the passivation layer to reach the second dielectric layer; the second dielectric layer with a design tolerance thickness of the semiconductor component is arranged below the fuse hole; a gasket structure passes through the passivation layer to connect the second metal layer; and a third dielectric layer is also arranged, the third dielectric layer is arranged in the second dielectric layer, and the second dielectric layer with a design tolerance thickness of the semiconductor componentis arranged below the third dielectric layer. The invention also discloses a semiconductor component fuse structure manufacturing method. The semiconductor component fuse structure can improve the uniformity of the dielectric layer on the metal layer in the fuse structure, better uniformity of the dielectric layer on the metal in the fuse structure can be provided, and uniformity requirements ofthe dielectric layer on the metal in the fuse structure can be met.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor element fuse structure. The invention also relates to a manufacturing method of the conductor element fuse structure. Background technique [0002] As chip size continues to increase, semiconductor components become more susceptible to silicon crystal defects, or impurities, such that failure of a single transistor can lead to failure of the entire chip. To solve this problem, the art adopts a scheme of designing a redundant circuit with a fuse structure in the semiconductor element. If a part of the circuit is found to be defective after the production process is completed, the fuse structure can be used to disable the part of the circuit, and the redundant circuit can be used to replace the defective circuit structure; [0003] Many chips use a laser fuse structure made of metal wires and use lasers to fuse. For the structure of the laser fuse, it is usually nec...

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Problems solved by technology

[0004] Under the premise of ensuring the circuit function of the traditional fuse structure, the minimum thickness allowed by the dielectric layer on the metal layer of the semiconductor element is called the design tolerance thickness of the semiconductor element. The thickness of the dielectric layer on the metal layer is less than the tolerance thickness of the semiconductor element design. range can cause failure of circuit repair

However, for the fuse structure formed by traditional methods, the uniformity of the thickness of the dielectric layer on the fuse structure between wafers and within the wafer is determined by the uniformity of the deposition of the dielectric layer connected by the fuse structure and the uniformity of the connected dielectric layer during grinding. Under the influence of various factors, especially when there is a high uniformity requirement for the dielectric layer on the metal layer, the uniformity of the dielectric layer on the metal layer often cannot meet the requirements , it is easy to cause the failure of semiconductor components

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