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Backside illuminated image sensor and manufacturing method thereof

An image sensor, back-illuminated technology, applied in electric solid devices, semiconductor devices, radiation control devices, etc., can solve the problems of affecting the photoelectric sensitivity of BSI image sensors, affecting the photoelectric sensitivity of photoelectric sensing devices, etc., to improve the photoelectric sensitivity, The effect of increasing the area

Inactive Publication Date: 2018-09-28
HUAIAN IMAGING DEVICE MFGR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the depth of ion implantation limits the area of ​​the photo-sensing device, thus affecting the photo-sensitivity of the photo-sensing device, which in turn affects the photo-sensitivity of the BSI image sensor

Method used

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  • Backside illuminated image sensor and manufacturing method thereof
  • Backside illuminated image sensor and manufacturing method thereof
  • Backside illuminated image sensor and manufacturing method thereof

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Embodiment Construction

[0018] Embodiments disclosed in this specification will be described in detail below with reference to the drawings. However, it should be understood that the descriptions of various embodiments are only illustrative, and are not intended to limit the invention claimed in this application in any way. Unless otherwise specifically stated or the context or its principle is explicit or implied, the relative arrangement, expression and numerical value, etc. of components and steps in the exemplary embodiment are not intended to limit the invention to be protected in the present application. In this specification, techniques, methods and devices known to persons of ordinary skill in the related art may not be discussed in detail, but under appropriate circumstances, the techniques, methods and devices should be considered as part of the specification.

[0019] The terms used herein are for describing specific embodiments only, and are not intended to limit the present disclosure. ...

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Abstract

The disclosure relates to a backside illuminated image sensor and a manufacturing method thereof. The backside illuminated image sensor includes a substrate, a groove and high K dielectric material layers, wherein the substrate includes a first part in which photodiodes are formed and a second part in which isolation regions between the adjacent photodiodes are formed; the groove is formed in thesecond part of the substrate and is adjacent to a back surface of the substrate; and the high K dielectric material layers are formed in the groove and on the back surface of the substrate, wherein depletion layers induced by the high K dielectric material layers in the substrate form the photodiodes with the rest part of the substrate.

Description

technical field [0001] The present disclosure relates to a back-illuminated image sensor and a method of manufacturing the same. Background technique [0002] Image sensors may be used to sense radiation (eg, optical radiation including, but not limited to, visible light, infrared, ultraviolet, etc.). Image sensors can be classified into back-illuminated (BSI) image sensors and front-illuminated (FSI) image sensors according to the way they receive radiation. [0003] A backside illuminated (BSI) image sensor is capable of receiving radiation from its backside. Different from front-illuminated (FSI) image sensors, in back-illuminated (BSI) image sensors, wiring and other components that may affect radiation reception are basically located on the front side of the substrate, while light enters from the back of the substrate. [0004] For BSI image sensors, photo-sensing devices (eg, photodiodes) are fabricated in semiconductor substrates by ion implantation according to con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14607H01L27/1464H01L27/14687
Inventor 张盛鑫北村阳介黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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