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Manufacturing method of target material assembly

A manufacturing method and component technology, applied in the field of target component manufacturing, can solve the problem that the quality of the target component needs to be improved, etc.

Inactive Publication Date: 2018-10-23
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the quality of the target assembly formed by the prior art needs to be improved

Method used

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  • Manufacturing method of target material assembly
  • Manufacturing method of target material assembly
  • Manufacturing method of target material assembly

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Experimental program
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Embodiment Construction

[0027] It can be seen from the background technology that the quality of the target assembly needs to be improved.

[0028] In the technical field of semiconductor manufacturing, the target assembly is usually formed by welding the blank of the titanium target and the back plate together using a hot isostatic pressing process (DB process for short). The blank of the titanium target has a smooth welding surface, and the specific welding steps include: placing the smooth welding surface on the welding surface of the back plate, preheating first, and using a hydraulic press of more than 4,000 tons after preheating Extruding up and down is carried out, so that the blank of the titanium target is welded to the back plate to form the target assembly.

[0029] The reasons for analyzing the quality of the target components to be improved include:

[0030] The back plate material of the target assembly is usually Al or Cu. During the hot isostatic pressing welding process, since the m...

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Abstract

The invention provides a manufacturing method of a target material assembly. The manufacturing method comprises the following steps that a blank of a titanium target material and a back plate are provided, the blank is provided with a sputtering surface and a welding surface opposite to the sputtering surface; turning of the welding surface is carried out, and threads are formed on the welding surface; and the blank of the titanium target material and the back plate are welded together by adopting a hot isostatic pressing process so as to form a target material assembly. According to the manufacturing method, the quality of the target material assembly formed by the manufacturing method is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a target component. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of semiconductor manufacturing. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. The quality of sputtering targets directly affects the sputtering technology. Film quality after injection. [0003] In the field of sputtering target manufacturing, the target assembly is composed of a blank that meets the sputtering performance, and a back plate that is combined with the blank by welding, and usually after the semi-finished blank is welded to the back plate, the The semi-finished blank is turned, and the semi-finished blank is processed to the finished size and shape. [0004] However, the quality of the target components for...

Claims

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Application Information

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IPC IPC(8): B23P15/00
CPCB23P15/00
Inventor 姚力军潘杰相原俊夫王学泽王利江
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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