Writing method of TLC NAND FLASH solid-state disk

Abstract

The invention relates to a writing method of a TLC NAND FLASH solid-state disk. The solid-state disk comprises single-layer storage units and a three-layer storage unit. The method comprises the following steps of: S1, giving a writing instruction by a main control end of the solid-state disk and writing data into an SLC data buffer area; S2, when a preset quantity of single-layer storage units isfully written with the data, distributing a copy and write-back instruction; S3, writing the data in the preset quantity of single-layer storage units into the three-layer storage unit; and S4, updating a physical pair logic mapping tale corresponding to the three-layer storage unit. Through implementing the method, the data writing speed of the main control end can be improved, the reading timecan be shortened, the waste collection frequency of the solid-state disk can be decreased and then the access efficacy of the solid-state disk can be improved.

Description

Technical field [0001] The present invention relates to the field of solid state hard disks, and more specifically, to a writing method of TLC NAND FLASH solid state hard disks. Background technique [0002] Compared with the traditional hard disk HDD, the non-volatile flash memory NAND Flash solid state drive (SSD) has faster random access time, lower read delay time, more consistent read and write performance, and even lower power consumption. However, it requires higher manufacturing costs than HDDs. [0003] SSDs are traditionally used based on single-level storage cells (Single-Level Cell, SLC) or multi-level storage cells (Multi-Level Cell, MLC). The single-layer storage cell SLC can only store one bit of information, so each storage cell has only two states of 0 or 1. The multi-layer storage cell MLC can store more than one bit of information. Traditionally, the MLC stores two bits of information, so there are four possible states (ie, 00, 01, 10, or 11). The SSD using SL...

AI Technical Summary

Problems solved by technology

[0007] Disadvantages of the existing technology: Since the SLC Block is written into the TLC Block, the GC method is used for garbage collection, and no additional processing is done during the writing process, and the data is simply written into the TLC Block

However, data writing after the host (Host) may be a large number of continuous area writes, or write access behaviors in a small area. This approach will cause continuous GC behavior, so that the read and write performance of the SSD is low. And further reduce the service life of SSD

In addition, this approach requires a large amount of Dynamic Random Access Memory (DRAM) support, otherwise the current read instruction data of the host control end is located in the TLC block, and cannot be read due to unstable data writing. Reading its data causes data loss

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