Writing method of TLC NAND FLASH solid-state disk

A solid-state drive, storage unit technology, applied in the input/output process of data processing, input/output to record carriers, instruments, etc., can solve problems such as shortening the service life of SSD, data writing, and low SSD read and write performance, etc. Achieve the effect of reducing the number of garbage collections, speeding up data writing, and improving access performance
CN108733318AInactive Publication Date: 2018-11-02YEESTOR MICROELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
YEESTOR MICROELECTRONICS CO LTD
Publication Date
2018-11-02
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to a writing method of a TLC NAND FLASH solid-state disk. The solid-state disk comprises single-layer storage units and a three-layer storage unit. The method comprises the following steps of: S1, giving a writing instruction by a main control end of the solid-state disk and writing data into an SLC data buffer area; S2, when a preset quantity of single-layer storage units isfully written with the data, distributing a copy and write-back instruction; S3, writing the data in the preset quantity of single-layer storage units into the three-layer storage unit; and S4, updating a physical pair logic mapping tale corresponding to the three-layer storage unit. Through implementing the method, the data writing speed of the main control end can be improved, the reading timecan be shortened, the waste collection frequency of the solid-state disk can be decreased and then the access efficacy of the solid-state disk can be improved.
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Description

Technical field

[0001] The present invention relates to the field of solid state hard disks, and more specifically, to a writing method of TLC NAND FLASH solid state hard disks. Background technique

[0002] Compared with the traditional hard disk HDD, the non-volatile flash memory NAND Flash solid state drive (SSD) has faster random access time, lower read delay time, more consistent read and write performance, and even lower power consumption. However, it requires higher manufacturing costs than HDDs.

[0003] SSDs are traditionally used based on single-level storage cells (Single-Level Cell, SLC) or multi-level storage cells (Multi-Level Cell, MLC). The single-layer storage cell SLC can only store one bit of information, so each storage cell has only two states of 0 or 1. The multi-layer storage cell MLC can store more than one bit of information. Traditionally, the MLC stores two bits of information, so there are four possible states (ie, 00, 01, 10, or 11). The SSD using SL...

Claims

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