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Method for preparing single-layer graphene by using parylene

A technology of parylene and single-layer graphene, applied in the direction of graphene, nano-carbon, etc., can solve the problems of increasing the production cost of graphene, achieve the effect of accelerating the improvement of preparation technology and improving the potential of industrialization

Active Publication Date: 2020-10-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, methane, as a gaseous carbon source, presents risks in transportation and storage, raising the cost of graphene production

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  • Method for preparing single-layer graphene by using parylene
  • Method for preparing single-layer graphene by using parylene

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[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0020] A method for preparing single-layer graphene by using parylene, comprising the following steps: pyrolyzing parylene and depositing it on the surface of copper foil as a solid carbon source; putting the solid carbon source and clean copper foil into dual temperature zones The reaction device, in which the solid carbon source is placed in the low-temperature area, and the clean copper foil is placed in the high-temperature area; after the reaction device is evacuated, the high-temperature area is heated to the set temperature, and the protective gas and reducing gas are passed; the low-temperature area is heated to the set temperature. Cool down; shut off gas and cool hot zone to room temperature. The method for prep...

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Abstract

The invention discloses a method for preparing single-layer graphene by utilizing poly-p-xylylene. The method comprises the following steps: cracking poly-p-xylylene and depositing on the surface of acopper foil to serve as a solid-state carbon source; adding the solid-state carbon source and the clean copper foil into a dual-temperature area reaction device, wherein the solid-state carbon sourceis arranged in the low-temperature area, and the clean copper foil is arranged in the high-temperature area; vacuumizing the reaction device, raising the temperature of the high-temperature area to aset temperature, and introducing shielding gas and reducing gas; raising the temperature of the low-temperature area to the set temperature, and cooling after the reaction is ended; closing the gas and cooling the high-temperature area to a room temperature. According to the method for preparing single-layer graphene by utilizing poly-p-xylylene disclosed by the invention, the preparation cost ofgraphene can be reduced, improvement of the single-layer graphene preparation technology is accelerated, and the industrialization potential of the single-layer graphene is improved.

Description

technical field [0001] The invention belongs to the field of graphene preparation, in particular to a method for preparing single-layer graphene by using parylene. Background technique [0002] Graphene was discovered in 2004 and won the Nobel Prize in Physics in 2010, thanks to its outstanding performance in force, heat, light, electricity, etc. The large-scale and low-cost single-layer graphene preparation method has become the cornerstone of graphene's large-scale application, attracting the attention of a large number of scientific researchers. At present, the mainstream single-layer graphene preparation method is chemical vapor deposition, which uses copper foil to catalyze methane gas to synthesize graphene. However, methane, as a gaseous carbon source, presents risks in transportation and storage, raising the cost of graphene production. Therefore, finding a low-cost solid carbon source has become an urgent problem to be solved at this stage. [0003] Parylene, the...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 程传同黄北举毛旭瑞董毅博张欢陈润陈弘达
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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