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A white light organic light emitting diode including thermally activated delayed fluorescent material and preparation method thereof

A technology of thermally activated delay and light-emitting diodes, which is applied in the fields of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc. It can solve complex device structures with multiple light-emitting layers, stricter production process requirements, and hinder commercialization processes, etc. Problems, achieve high color rendering index, reduce processing costs, and reduce material costs

Active Publication Date: 2020-06-02
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the Adachi group of Kyushu University in Japan and the Ma Dongge group in China have applied thermally activated delayed fluorescent materials as light-emitting objects in the preparation of white light devices, and achieved good device performance, but they all use multi-luminescence The complex device structure of the layer, the high cost of preparation, and stricter requirements on the production process have greatly hindered its commercialization process.

Method used

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  • A white light organic light emitting diode including thermally activated delayed fluorescent material and preparation method thereof
  • A white light organic light emitting diode including thermally activated delayed fluorescent material and preparation method thereof
  • A white light organic light emitting diode including thermally activated delayed fluorescent material and preparation method thereof

Examples

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Embodiment 1

[0053] A white light organic light emitting diode comprising a thermally activated delayed fluorescence material, such as figure 1 As shown, it includes a substrate 1, an anode 2 formed on the surface of the substrate, a hole injection layer 3 formed on the surface of the anode, a hole transport layer 4 formed on the surface of the hole injection layer, and a hole transport layer 4 formed on the surface of the hole transport layer. The electron-exciton blocking layer 5, the light-emitting layer 6 formed on the surface of the electron-exciton blocking layer, the electron transport layer 7 formed on the surface of the light-emitting layer, the electron injection layer 8 formed on the surface of the electron transport layer, and the electron injection layer formed on the surface of the electron injection layer surface of the cathode 9 .

[0054] The preparation method is as follows:

[0055] 1) Clean the etched ITO conductive glass substrate sequentially with a cleaning agent, u...

Embodiment 2

[0070] A white light organic light-emitting diode comprising a thermally activated delayed fluorescent material, the structure of which is the same as in Example 1, and the preparation method is as follows:

[0071] 1) The cleaning process of the ITO glass substrate is the same as in Example 1, and it is directly transferred to the vacuum evaporation chamber after oxygen plasma treatment.

[0072]2) After the vacuum reaches the required value, the hole injection layer material HAT-CN, the hole transport layer material TAPC, the electron-exciton blocking layer material mCP, the light emitting layer material TXO-PhCz4 and o,o'-NPh2 are sequentially evaporated The blend film (mass ratio is TXO-PhCz4:o,o'-NPh 2 =1:100), electron transport layer material TmPyPB, electron injection layer material LiF, cathode material metal Al.

[0073] The evaporation rate and thickness of each functional layer are monitored in real time by a film thickness monitor, and the respective control rate...

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Abstract

The invention discloses a white light organic light-emitting diode comprising a thermally activated delayed fluorescent material, comprising a substrate, an anode formed on the surface of the substrate, a hole transport layer formed on the surface of the anode, and a light-emitting layer formed on the surface of the hole transport layer , an electron transport layer formed on the surface of the light emitting layer and a cathode formed on the surface of the electron transport layer. The thermally activated delayed fluorescent material used in the white light organic light-emitting diode of the present invention replaces traditional fluorescent materials and phosphorescent materials containing heavy metals, reduces the preparation cost, and the theoretical internal quantum efficiency can reach 100%, another major advantage of the present invention The structure of the prepared white light device is extremely simple and has good application prospects.

Description

technical field [0001] The invention relates to the technical field of organic photoelectric devices. More specifically, it relates to a white light organic light emitting diode including thermally activated delayed fluorescent material and a preparation method thereof. Background technique [0002] In recent years, with the wide application of organic light-emitting diodes (OLEDs) in flat-panel displays and solid-state lighting, more and more researchers have devoted themselves to the field of organic optoelectronic research. Organic light-emitting diodes refer to devices made of small organic molecules or conjugated polymers as electroluminescent materials. Compared with traditional display technologies, organic light-emitting diodes have a series of incomparable advantages, such as: all solid state, low power consumption, wide color gamut, fast response speed, and flexible display. Therefore, organic light-emitting diodes are also known as the most ideal and most potent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56C09K11/06
CPCC09K11/06H10K85/00H10K50/80H10K50/11H10K71/00Y02B20/00
Inventor 王鹰陈永振汪鹏飞
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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