Pixel drive circuit sensing method and pixel drive circuit

Abstract

The invention provides a pixel drive circuit sensing method and a pixel drive circuit. In the method, the level of a common voltage is enabled to be a second level less than a first level at first ata rewriting stage, and then is switched to the first level and written into a second node; when the common voltage is at the second level, the voltage on a sensing line will be quickly pulled down toa level close to the first level because of the drive charging, and then the common voltage is switched to the first level to achieve the correct level writing for the sensing line. The method can effectively reduce the time duration of the rewriting stage, facilitates the prolonging of the duration of the charging stage, and improves the pixel drive circuit sensing accuracy.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a pixel driving circuit sensing method and a pixel driving circuit. Background technique [0002] Organic light emitting diode (Organic Light Emitting Display, OLED) display device has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide operating temperature range, and can realize flexible display and With many advantages such as large-area full-color display, it is recognized by the industry as a display device with the most potential for development. [0003] OLED display devices can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED) two categories according to the driving method, namely direct addressing and thin film transistor (Thin Film Transistor, TFT) matrix addressing two types. Among them, AMOLED h...

AI Technical Summary

Problems solved by technology

In the rewriting phase t40, the scan line WR transmits a high-potential scan signal to control the first TFT T10 to turn on, the sensing control line RD transmits a high-potential sensing signal to control the third TFT T30 to turn on, and the switch K1 turns it on. The movable contact 4 is connected to the first static contact 5, the data line DATA writes the display potential into the gate of the second thin film transistor T20, and the common voltage VCM writes into the sensing line 100. Compared with the common voltage VCM, the potential of the common voltage VCM has risen, and the writing of the common voltage VCM into the sensing line 100 will take a long time to discharge the sensing line 100, so that the duration of the rewriting phase t40 is relatively long. In the existing OLED display device, the frame The total duration of the blanking phase is very short (for a 4K display device, the total duration of the frame blanking phase is 0.68ms), the duration of the initial phase t10 cannot be compressed because it is too short, and the duration of the sensing phase t30 is limited Since the characteristics of the analog-to-digital converter ADC cannot be changed, the increase in the duration of the rewriting phase t40 makes the duration of the charging phase t20 severely compressed, resulting in insufficient charging of the sensing line 100 and inaccurate sensing results

Images