Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a forming method thereof, the forming method comprising: providing a substrate; forming a C-containing dielectric film on the substrate; performing a chemical mechanical polishing process on the C-containing dielectric film, wherein the step of the chemical mechanical polishing process The method includes performing multiple grinding operations on the C-containing medium film with a grinding pad, and cleaning the grinding pad with a weak acid cleaning solution before and after each grinding operation. When the present invention uses a polishing pad to perform multiple grinding operations on the C-containing medium film, before and after each grinding operation, the polishing pad is cleaned with a weak acid cleaning solution, thereby removing the organic residue on the surface of the polishing pad , to avoid the formation of organic residues and scratch defects on the surface of the formed semiconductor structure, thereby improving the electrical performance of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In a semiconductor device, reducing the RC delay (Resistance capacitance delay) can improve the performance of the semiconductor device. With the development of semiconductor technology and the advancement of technology nodes, the functions of devices are becoming more and more powerful, the integration of devices is getting higher and higher, and the feature size (Critical Dimension, CD) of devices is getting smaller and smaller. Correspondingly, the RC is further reduced. Delay has become one of the important measures to improve the performance of semiconductor devices. [0003] At present, in order to reduce the RC delay, the material used for the interlayer dielectric layer is usually a low-k dielectric material or an ultra-low-k dielectric material, so as to improve the performance of the sem...

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Problems solved by technology

[0004] However, the performance of semiconductor devices still needs to be improved

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