Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A vanadate crystal laser based on neodymium ion doping

A neodymium ion, laser technology, applied in the laser field, can solve the problems of strong light, high laser threshold, complex laser structure and design, etc.

Active Publication Date: 2020-02-14
SHANDONG UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned methods for obtaining lasers with wavelengths of 1176nm and 1170nm are all stimulated Raman scattering techniques, which are a third-order nonlinear optical process, and the electrical polarization of the medium is not linearly related to the incident light intensity, but a third-order power Series relationship, photons participate in the process of forming laser, it is photon-phonon interaction, the required light intensity is larger, the laser threshold is higher, and the laser structure and design are more complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A vanadate crystal laser based on neodymium ion doping
  • A vanadate crystal laser based on neodymium ion doping
  • A vanadate crystal laser based on neodymium ion doping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A vanadate crystal laser based on neodymium ion doping, with a structure such as figure 1 As shown, the excitation source 1, the focusing system 2, the input cavity mirror 3, the laser dielectric crystal 4, and the output cavity mirror 5 are sequentially arranged along the optical path. The input cavity mirror 3 and the output cavity mirror 5 constitute a laser resonator. The excitation source 1 is a laser diode laser with an emission center wavelength of 808nm; the focusing system 2 is composed of two convex lenses with a focal length of 3cm, the focal length of the focusing system 2 is 3cm, and the focusing ratio is 1:1; the input cavity mirror 3 is a flat mirror A dielectric film A with high transmittance to 800nm-890nm, 1000nm-1080nm, 1320nm-1400nm and high reflection to 1123nm-1300nm is plated on top; the laser dielectric crystal 4 is yttrium vanadate crystal with a doping concentration of neodymium ions of 0.25wt%, The crystal length in the direction of light tran...

Embodiment 2

[0043] A vanadate crystal laser based on neodymium ion doping, as described in Embodiment 1, the difference is that the excitation source 1 is a laser diode laser emitting a central wavelength of 880nm, and other conditions and components are consistent with those described in Embodiment 1 . When the laser in this embodiment is used, the quantum defect is small, which is beneficial to the high-efficiency output of the laser. .

Embodiment 3-5

[0045] A kind of vanadate crystal laser based on neodymium ion doping, as described in embodiment 1, the difference is the laser medium crystal 4, the light-passing direction length of the yttrium vanadate crystal doped with neodymium ion is respectively 4mm, 8mm and 10mm, other conditions and components are consistent with those described in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
lengthaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a neodymium ion doped vanadate crystal laser. The neodymium ion doped vanadate crystal laser comprises an excitation source, a focusing system, a laser resonant cavity and a laser dielectric crystal. A neodymium ion doped vanadate crystal serves as the laser dielectric crystal; a diode laser emitting a laser with the central wavelength being 808 nm or 880 nm serves as the excitation source; the laser resonant cavity is composed of an input cavity lens and an output cavity lens, and the input cavity lens and the output cavity lens are plated with suitable film structuresto obtain output of a laser at the waveband of 1123-1300 nm; and the laser dielectric crystal is located between the input cavity lens and the output cavity lens, and the excitation source, the focusing system and the laser resonant cavity are sequentially arrayed along a light path. The neodymium ion doped vanadate crystal laser only refers to the laser effect, an emission spectrum is expanded through the electron-phonon coupling effect in the neodymium ion doped vanadate crystal, and the neodymium ion doped vanadate crystal laser has the advantages of being low in laser threshold value, highin conversion efficiency, simple in design and the like.

Description

technical field [0001] The invention relates to a vanadate crystal laser based on neodymium ion doping, which belongs to the field of laser technology. Background technique [0002] Lasers with different wavelengths have different application ranges and requirements, and the wavelength of the laser is determined by the intrinsic energy level of the activated ions in the gain medium. Currently based on rare earth ions (such as Nd 3+ , Yb 3+ etc.), the radiation of electrons between intrinsic energy levels has been maturely realized in 946nm, 912nm, 1064nm, 1340nm, 960nm and other wavelength lasers (Applied Physics B, 70, 769, 2000; Applied Physics B, 86, 65, 2007; patent Document CN101728757A). In the wavelength range of 1100-1300nm, Nd 3+ The intrinsic emission of ions may realize the stimulated emission of laser near 1110nm. For example, 1112nm and 1123nm lasers can be obtained by using neodymium-doped yttrium aluminum garnet crystal (abbreviation: Nd:YAG) stimulated r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/08H01S3/0941H01S3/16H01S3/30
CPCH01S3/08H01S3/0941H01S3/1611H01S3/1671H01S3/30
Inventor 于浩海张怀金房倩楠马长勤韩学坤
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products